IPP084N06L3GHKSA1
For Reference Only
| Part Number | IPP084N06L3GHKSA1 |
| PNEDA Part # | IPP084N06L3GHKSA1 |
| Description | MOSFET N-CH 60V 50A TO220-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 8,856 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 19 - Mar 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPP084N06L3GHKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPP084N06L3GHKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPP084N06L3GHKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 34µA |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 4.5V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4900pF @ 30V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3 |
| Package / Case | TO-220-3 |
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Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 18mOhm @ 7.5A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 1127pF @ 10V FET Feature - Power Dissipation (Max) 1.6W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 9-BGA (2x2.1) Package / Case 9-WFBGA |
Manufacturer Microsemi Corporation Series Military, MIL-PRF-19500/570 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 1.69A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 1.4Ohm @ 1.07A, 5V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 5nC @ 5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 8.33W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-205AF (TO-39) Package / Case TO-205AF Metal Can |
Manufacturer ON Semiconductor Series Automotive, AEC-Q101, PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.2mOhm @ 80A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 245nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 13500pF @ 20V FET Feature - Power Dissipation (Max) 333W (Tj) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
