Transistors

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Records 64,903

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Part Number	Description	In Stock
EKI10198 Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 47A TO-220 Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 17.8mOhm @ 23.4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 55.8nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3990pF @ 25V FET Feature: - Power Dissipation (Max): 116W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock8,316
EKI10300 Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 34A TO-220 Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 28.8mOhm @ 17.1A, 10V Vgs(th) (Max) @ Id: 2.5V @ 650µA Gate Charge (Qg) (Max) @ Vgs: 36.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2540pF @ 25V FET Feature: - Power Dissipation (Max): 90W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock6,840
EKV550 Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V TO-220 Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V FET Feature: - Power Dissipation (Max): 85W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock3,906
EMH1307-TL-H ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 6.5A EMH8 Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 26mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-EMH Package / Case: 8-SMD, Flat Lead	In Stock5,868
EMH1405-P-TL-H ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 8.5A EMH8 Manufacturer: ON Semiconductor Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-EMH Package / Case: 8-SMD, Flat Lead	In Stock5,562
EMH1405-TL-H ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 8.5A EMH8 Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 19mOhm @ 4A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 10V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-EMH Package / Case: 8-SMD, Flat Lead	In Stock4,968
EMH2801-TL-H ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 3A EMH8 Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-EMH Package / Case: 8-SMD, Flat Lead	In Stock5,148
EPC2001 EPC	Transistors - FETs, MOSFETs - Single GANFET TRANS 100V 25A BUMPED DIE Manufacturer: EPC Series: eGaN® FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Vgs (Max): +6V, -5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 50V FET Feature: - Power Dissipation (Max): - Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Outline (11-Solder Bar) Package / Case: Die	In Stock3,418
EPC2001C EPC	Transistors - FETs, MOSFETs - Single GANFET TRANS 100V 36A BUMPED DIE Manufacturer: EPC Series: eGaN® FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 36A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V Vgs (Max): +6V, -4V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 50V FET Feature: - Power Dissipation (Max): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Outline (11-Solder Bar) Package / Case: Die	In Stock614,322
EPC2007 EPC	Transistors - FETs, MOSFETs - Single GANFET TRANS 100V 6A BUMPED DIE Manufacturer: EPC Series: eGaN® FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 5V Vgs(th) (Max) @ Id: 2.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 5V Vgs (Max): +6V, -5V Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 50V FET Feature: - Power Dissipation (Max): - Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Outline (5-Solder Bar) Package / Case: Die	In Stock4,464
EPC2007C EPC	Transistors - FETs, MOSFETs - Single GANFET TRANS 100V 6A BUMPED DIE Manufacturer: EPC Series: eGaN® FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 5V Vgs(th) (Max) @ Id: 2.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V Vgs (Max): +6V, -4V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 50V FET Feature: - Power Dissipation (Max): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Outline (5-Solder Bar) Package / Case: Die	In Stock139,368
EPC2010 EPC	Transistors - FETs, MOSFETs - Single GANFET TRANS 200V 12A BUMPED DIE Manufacturer: EPC Series: eGaN® FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V Vgs (Max): +6V, -4V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 100V FET Feature: - Power Dissipation (Max): - Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	In Stock3,526
EPC2010C EPC	Transistors - FETs, MOSFETs - Single GANFET TRANS 200V 22A BUMPED DIE Manufacturer: EPC Series: eGaN® FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 5V Vgs (Max): +6V, -4V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 100V FET Feature: - Power Dissipation (Max): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Outline (7-Solder Bar) Package / Case: Die	In Stock78,360
EPC2012 EPC	Transistors - FETs, MOSFETs - Single GANFET TRANS 200V 3A BUMPED DIE Manufacturer: EPC Series: eGaN® FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 5V Vgs (Max): +6V, -5V Input Capacitance (Ciss) (Max) @ Vds: 145pF @ 100V FET Feature: - Power Dissipation (Max): - Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	In Stock7,056
EPC2012C EPC	Transistors - FETs, MOSFETs - Single GANFET TRANS 200V 5A BUMPED DIE Manufacturer: EPC Series: eGaN® FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V Vgs (Max): +6V, -4V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 100V FET Feature: - Power Dissipation (Max): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Outline (4-Solder Bar) Package / Case: Die	In Stock1,650
EPC2014 EPC	Transistors - FETs, MOSFETs - Single GANFET TRANS 40V 10A BUMPED DIE Manufacturer: EPC Series: eGaN® FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 5V Vgs (Max): +6V, -5V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 20V FET Feature: - Power Dissipation (Max): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Outline (5-Solder Bar) Package / Case: Die	In Stock4,482
EPC2014C EPC	Transistors - FETs, MOSFETs - Single GANFET TRANS 40V 10A BUMPED DIE Manufacturer: EPC Series: eGaN® FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V Vgs (Max): +6V, -4V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 20V FET Feature: - Power Dissipation (Max): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Outline (5-Solder Bar) Package / Case: Die	In Stock8,381
EPC2015 EPC	Transistors - FETs, MOSFETs - Single GANFET TRANS 40V 33A BUMPED DIE Manufacturer: EPC Series: eGaN® FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 33A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 4mOhm @ 33A, 5V Vgs(th) (Max) @ Id: 2.5V @ 9mA Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 5V Vgs (Max): +6V, -5V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 20V FET Feature: - Power Dissipation (Max): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Outline (11-Solder Bar) Package / Case: Die	In Stock5,058
EPC2015C EPC	Transistors - FETs, MOSFETs - Single GANFET TRANS 40V 33A BUMPED DIE Manufacturer: EPC Series: eGaN® FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 53A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 4mOhm @ 33A, 5V Vgs(th) (Max) @ Id: 2.5V @ 9mA Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 5V Vgs (Max): +6V, -4V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 20V FET Feature: - Power Dissipation (Max): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	In Stock73,122
EPC2016 EPC	Transistors - FETs, MOSFETs - Single GANFET TRANS 100V 11A BUMPED DIE Manufacturer: EPC Series: eGaN® FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 16mOhm @ 11A, 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V Vgs (Max): +6V, -5V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 50V FET Feature: - Power Dissipation (Max): - Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	In Stock8,586
EPC2016C EPC	Transistors - FETs, MOSFETs - Single GANFET TRANS 100V 18A BUMPED DIE Manufacturer: EPC Series: eGaN® FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 16mOhm @ 11A, 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 5V Vgs (Max): +6V, -4V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 50V FET Feature: - Power Dissipation (Max): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	In Stock2,281,512
EPC2018 EPC	Transistors - FETs, MOSFETs - Single GANFET TRANS 150V 12A BUMPED DIE Manufacturer: EPC Series: eGaN® FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V Vgs (Max): +6V, -5V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 100V FET Feature: - Power Dissipation (Max): - Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	In Stock8,388
EPC2019 EPC	Transistors - FETs, MOSFETs - Single GAN TRANS 200V 8.5A BUMPED DIE Manufacturer: EPC Series: eGaN® FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 5V Vgs(th) (Max) @ Id: 2.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V Vgs (Max): +6V, -4V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 100V FET Feature: - Power Dissipation (Max): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	In Stock70,254
EPC2020 EPC	Transistors - FETs, MOSFETs - Single GANFET TRANS 60V 90A BUMPED DIE Manufacturer: EPC Series: eGaN® FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 2.2mOhm @ 31A, 5V Vgs(th) (Max) @ Id: 2.5V @ 16mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Vgs (Max): +6V, -4V Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 30V FET Feature: - Power Dissipation (Max): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	In Stock44,250
EPC2021 EPC	Transistors - FETs, MOSFETs - Single GANFET TRANS 80V 90A BUMPED DIE Manufacturer: EPC Series: eGaN® FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 2.5mOhm @ 29A, 5V Vgs(th) (Max) @ Id: 2.5V @ 14mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Vgs (Max): +6V, -4V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 40V FET Feature: - Power Dissipation (Max): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	In Stock29,760
EPC2021ENGR EPC	Transistors - FETs, MOSFETs - Single TRANS GAN 80V 60A BUMPED DIE Manufacturer: EPC Series: eGaN® FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 2.5mOhm @ 29A, 5V Vgs(th) (Max) @ Id: 2.5V @ 14mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Vgs (Max): +6V, -4V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 40V FET Feature: - Power Dissipation (Max): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	In Stock8,640
EPC2022 EPC	Transistors - FETs, MOSFETs - Single GAN TRANS 100V 3MOHM BUMPED DIE Manufacturer: EPC Series: eGaN® FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2.5V @ 12mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): +6V, -4V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 50V FET Feature: - Power Dissipation (Max): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	In Stock43,488
EPC2023 EPC	Transistors - FETs, MOSFETs - Single GANFET TRANS 30V 60A BUMPED DIE Manufacturer: EPC Series: eGaN® FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 1.3mOhm @ 40A, 5V Vgs(th) (Max) @ Id: 2.5V @ 20mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 15V FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	In Stock52,068
EPC2024 EPC	Transistors - FETs, MOSFETs - Single GANFET NCH 40V 60A DIE Manufacturer: EPC Series: eGaN® FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 1.5mOhm @ 37A, 5V Vgs(th) (Max) @ Id: 2.5V @ 19mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): +6V, -4V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 20V FET Feature: - Power Dissipation (Max): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	In Stock13,752
EPC2025 EPC	Transistors - FETs, MOSFETs - Single GAN TRANS 300V 150MO BUMPED DIE Manufacturer: EPC Series: eGaN® FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 150mOhm @ 3A, 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): +6V, -4V Input Capacitance (Ciss) (Max) @ Vds: 194pF @ 240V FET Feature: - Power Dissipation (Max): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	In Stock7,128

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