EPC2020

For Reference Only
Part Number | EPC2020 |
PNEDA Part # | EPC2020 |
Description | GANFET TRANS 60V 90A BUMPED DIE |
Manufacturer | EPC |
Unit Price | Request a Quote |
In Stock | 44,250 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Apr 3 - Apr 8 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
EPC2020 Resources
Brand | EPC |
ECAD Module |
![]() |
Mfr. Part Number | EPC2020 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Datasheet |
Payment Method






- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode





- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- EPC2020 Datasheet
- where to find EPC2020
- EPC
- EPC EPC2020
- EPC2020 PDF Datasheet
- EPC2020 Stock
- EPC2020 Pinout
- Datasheet EPC2020
- EPC2020 Supplier
- EPC Distributor
- EPC2020 Price
- EPC2020 Distributor
EPC2020 Specifications
Manufacturer | EPC |
Series | eGaN® |
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 90A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Rds On (Max) @ Id, Vgs | 2.2mOhm @ 31A, 5V |
Vgs(th) (Max) @ Id | 2.5V @ 16mA |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 5V |
Vgs (Max) | +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds | 1780pF @ 30V |
FET Feature | - |
Power Dissipation (Max) | - |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Die |
Package / Case | Die |
The Products You May Be Interested In
Manufacturer STMicroelectronics Series MDmesh™ II Plus FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.25A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 232pF @ 100V FET Feature - Power Dissipation (Max) 60W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer GeneSiC Semiconductor Series - FET Type - Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 300V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 240mOhm @ 5A Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 20W (Tc) Operating Temperature -55°C ~ 225°C (TJ) Mounting Type Through Hole Supplier Device Package TO-46 Package / Case TO-46-3 |
Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 12A (Ta), 42.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V Rds On (Max) @ Id, Vgs 14.4mOhm @ 15A, 10V Vgs(th) (Max) @ Id 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1850pF @ 50V FET Feature - Power Dissipation (Max) 5W (Ta), 62.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |
Manufacturer STMicroelectronics Series STripFET™ F6 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 46A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 15mOhm @ 23A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 34nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3525pF @ 25V FET Feature - Power Dissipation (Max) 70W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Vishay Siliconix Series EF FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 193mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1081pF @ 100V FET Feature - Power Dissipation (Max) 114W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 8 x 8 Package / Case 8-PowerTDFN |