Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
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Transistors - Special Purpose (162)

Records 64,903

Page 1157/2164

Part Number	Description	In Stock
EPC8010 EPC	Transistors - FETs, MOSFETs - Single GAN TRANS 100V 2.7A BUMPED DIE Manufacturer: EPC Series: eGaN® FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.48nC @ 5V Vgs (Max): +6V, -4V Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 50V FET Feature: - Power Dissipation (Max): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	In Stock1,642
ES6U1T2R Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 1.3A WEMT6 Manufacturer: Rohm Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 6V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WEMT Package / Case: SOT-563, SOT-666	In Stock61,992
ES6U2T2R Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 1.5A WEMT6 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WEMT Package / Case: SOT-563, SOT-666	In Stock6,696
ES6U3T2CR Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 1.4A WEMT6 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 240mOhm @ 1.4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WEMT Package / Case: SOT-563, SOT-666	In Stock2,322
ES6U41T2R Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 1.5A WEMT6 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WEMT Package / Case: SOT-563, SOT-666	In Stock2,880
ES6U42T2R Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 1A WEMT6 Manufacturer: Rohm Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WEMT Package / Case: SOT-563, SOT-666	In Stock5,814
FA38SA50LC Vishay Semiconductor Diodes Division	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 38A SOT-227 Manufacturer: Vishay Semiconductor Diodes Division Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 420nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V FET Feature: - Power Dissipation (Max): 500W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	In Stock4,482
FA57SA50LC Vishay Semiconductor Diodes Division	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 57A SOT-227 Manufacturer: Vishay Semiconductor Diodes Division Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 338nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V FET Feature: - Power Dissipation (Max): 625W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	In Stock66
FB180SA10 Vishay Semiconductor Diodes Division	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 180A SOT-227 Manufacturer: Vishay Semiconductor Diodes Division Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6.5mOhm @ 108A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V FET Feature: - Power Dissipation (Max): 480W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	In Stock7,722
FCA16N60 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 16A TO-3P Manufacturer: ON Semiconductor Series: SuperFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V FET Feature: - Power Dissipation (Max): 167W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock5,292
FCA16N60_F109 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 16A TO-3P Manufacturer: ON Semiconductor Series: SuperFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V FET Feature: - Power Dissipation (Max): 167W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock8,046
FCA16N60N ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V TO-3PN Manufacturer: ON Semiconductor Series: SupreMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 199mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52.3nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 100V FET Feature: - Power Dissipation (Max): 134.4W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock4,122
FCA20N60 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20A TO-3P Manufacturer: ON Semiconductor Series: SuperFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V FET Feature: - Power Dissipation (Max): 208W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock3,544
FCA20N60F ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20A TO-3PN Manufacturer: ON Semiconductor Series: SuperFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V FET Feature: - Power Dissipation (Max): 208W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock9,024
FCA20N60-F109 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20A TO-3P Manufacturer: ON Semiconductor Series: SuperFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V FET Feature: - Power Dissipation (Max): 208W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock7,056
FCA20N60FS ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20A TO-3PN Manufacturer: ON Semiconductor Series: SuperFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V FET Feature: - Power Dissipation (Max): 208W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock6,210
FCA22N60N ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 22A TO-3PN Manufacturer: ON Semiconductor Series: SupreMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 100V FET Feature: - Power Dissipation (Max): 205W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock6,984
FCA35N60 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 35A TO-3PN Manufacturer: ON Semiconductor Series: SuperFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 98mOhm @ 17.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 181nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 6640pF @ 25V FET Feature: - Power Dissipation (Max): 312.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock9,720
FCA36N60NF ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 34.9A TO3PN Manufacturer: ON Semiconductor Series: FRFET®, SuperFET® II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 34.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 4245pF @ 100V FET Feature: - Power Dissipation (Max): 312W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock9,816
FCA47N60 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 47A TO-3P Manufacturer: ON Semiconductor Series: SuperFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V FET Feature: - Power Dissipation (Max): 417W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock8,988
FCA47N60F ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 47A TO-3PN Manufacturer: ON Semiconductor Series: SuperFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 73mOhm @ 23.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V FET Feature: - Power Dissipation (Max): 417W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock9,144
FCA47N60-F109 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 47A TO-3P Manufacturer: ON Semiconductor Series: SuperFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V FET Feature: - Power Dissipation (Max): 417W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock6,102
FCA47N60F_SN00171 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO-3PN Manufacturer: ON Semiconductor Series: SuperFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 47A Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 73mOhm @ 23.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V FET Feature: - Power Dissipation (Max): 417W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock8,946
FCA76N60N ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 76A TO-3PN Manufacturer: ON Semiconductor Series: SupreMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 36mOhm @ 38A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 12385pF @ 100V FET Feature: - Power Dissipation (Max): 543W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	In Stock18,576
FCB070N65S3 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 44A D2PAK Manufacturer: ON Semiconductor Series: SuperFET® III FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 4.5V @ 4.4mA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3090pF @ 400V FET Feature: - Power Dissipation (Max): 312W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock15,912
FCB110N65F ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 35A D2PAK Manufacturer: ON Semiconductor Series: FRFET®, SuperFET® II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V Vgs(th) (Max) @ Id: 5V @ 3.5mA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4895pF @ 100V FET Feature: - Power Dissipation (Max): 357W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock7,092
FCB11N60FTM ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 11A D2PAK Manufacturer: ON Semiconductor Series: SuperFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 25V FET Feature: - Power Dissipation (Max): 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock2,466
FCB11N60TM ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 11A D2PAK Manufacturer: ON Semiconductor Series: SuperFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 25V FET Feature: - Power Dissipation (Max): 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock7,830
FCB199N65S3 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 14A D2PAK Manufacturer: ON Semiconductor Series: SuperFET® III FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 199mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.4mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1225pF @ 400V FET Feature: - Power Dissipation (Max): 98W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock8,856
FCB20N60-F085 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20A D2PAK Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101, SuperFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 198mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V FET Feature: - Power Dissipation (Max): 341W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AB Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock3,582

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