EPC2016
For Reference Only
| Part Number | EPC2016 |
| PNEDA Part # | EPC2016 |
| Description | GANFET TRANS 100V 11A BUMPED DIE |
| Manufacturer | EPC |
| Unit Price | Request a Quote |
| In Stock | 8,586 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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EPC2016 Resources
| Brand | EPC |
| ECAD Module |
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| Mfr. Part Number | EPC2016 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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EPC2016 Specifications
| Manufacturer | EPC |
| Series | eGaN® |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 11A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 3mA |
| Gate Charge (Qg) (Max) @ Vgs | 5.2nC @ 5V |
| Vgs (Max) | +6V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Die |
| Package / Case | Die |
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Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 325mOhm @ 3.75A, 10V Vgs(th) (Max) @ Id 5.25V @ 1mA Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 755pF @ 25V FET Feature - Power Dissipation (Max) 52W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
