Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

EPC2007C

EPC2007C

For Reference Only

Part Number EPC2007C
PNEDA Part # EPC2007C
Description GANFET TRANS 100V 6A BUMPED DIE
Manufacturer EPC
Unit Price Request a Quote
In Stock 139,368
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 15 - Mar 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

EPC2007C Resources

Brand EPC
ECAD Module ECAD
Mfr. Part NumberEPC2007C
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
EPC2007C, EPC2007C Datasheet (Total Pages: 6, Size: 894.9 KB)
PDFEPC2007C Datasheet Cover
EPC2007C Datasheet Page 2 EPC2007C Datasheet Page 3 EPC2007C Datasheet Page 4 EPC2007C Datasheet Page 5 EPC2007C Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • EPC2007C Datasheet
  • where to find EPC2007C
  • EPC

  • EPC EPC2007C
  • EPC2007C PDF Datasheet
  • EPC2007C Stock

  • EPC2007C Pinout
  • Datasheet EPC2007C
  • EPC2007C Supplier

  • EPC Distributor
  • EPC2007C Price
  • EPC2007C Distributor

EPC2007C Specifications

ManufacturerEPC
SerieseGaN®
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs30mOhm @ 6A, 5V
Vgs(th) (Max) @ Id2.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs2.2nC @ 5V
Vgs (Max)+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds220pF @ 50V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDie Outline (5-Solder Bar)
Package / CaseDie

The Products You May Be Interested In

FDB86569-F085

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101, PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5.6mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

52nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2520pF @ 30V

FET Feature

-

Power Dissipation (Max)

94W (Tj)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SCT3030ALHRC11

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

70A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V

Rds On (Max) @ Id, Vgs

39mOhm @ 27A, 18V

Vgs(th) (Max) @ Id

5.6V @ 13.3mA

Gate Charge (Qg) (Max) @ Vgs

104nC @ 18V

Vgs (Max)

+22V, -4V

Input Capacitance (Ciss) (Max) @ Vds

1526pF @ 500V

FET Feature

-

Power Dissipation (Max)

262W

Operating Temperature

175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247N

Package / Case

TO-247-3

AOD3T40P

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

400V

Current - Continuous Drain (Id) @ 25°C

2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.3Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

139pF @ 100V

FET Feature

-

Power Dissipation (Max)

35W (Tc)

Operating Temperature

-50°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Manufacturer

IXYS

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

7.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

200mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3.5V @ 1.1mA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1520pF @ 100V

FET Feature

Super Junction

Power Dissipation (Max)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220ABFP

Package / Case

TO-220-3 Full Pack, Isolated Tab

BSC012N06NSATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

100A

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

1.2mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

3.3V @ 147µA

Gate Charge (Qg) (Max) @ Vgs

143nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

11000pF @ 30V

FET Feature

-

Power Dissipation (Max)

214W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TSON-8-3

Package / Case

8-PowerTDFN

Recently Sold

MAX4162ESA+

MAX4162ESA+

Maxim Integrated

IC OPAMP GP 1 CIRCUIT 8SOIC

SMBJ26A-13-F

SMBJ26A-13-F

Diodes Incorporated

TVS DIODE 26V 42.1V SMB

MIC2544A-1YMM

MIC2544A-1YMM

Microchip Technology

IC SW CURR LIMIT HI SIDE 8MSOP

PIC16F1705-I/P

PIC16F1705-I/P

Microchip Technology

IC MCU 8BIT 14KB FLASH 14DIP

MAX1680ESA

MAX1680ESA

Maxim Integrated

IC REG CHARGE PUMP INV 8SOIC

SMAJ36A

SMAJ36A

Bourns

TVS DIODE 36V 58.1V SMA

MOCD207R2M

MOCD207R2M

ON Semiconductor

OPTOISO 2.5KV 2CH TRANS 8SOIC

M25PX16-VMW6TG TR

M25PX16-VMW6TG TR

Micron Technology Inc.

IC FLASH 16M SPI 75MHZ 8SO

NC7WZ17P6

NC7WZ17P6

ON Semiconductor

IC BUF NON-INVERT 5.5V SC70-6

T495X107K025ATE150

T495X107K025ATE150

KEMET

CAP TANT 100UF 10% 25V 2917

BLM18PG471SN1D

BLM18PG471SN1D

Murata

FERRITE BEAD 470 OHM 0603 1LN

VS-30BQ060TRPBF

VS-30BQ060TRPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 3A SMC