Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

EPC2018

EPC2018

For Reference Only

Part Number EPC2018
PNEDA Part # EPC2018
Description GANFET TRANS 150V 12A BUMPED DIE
Manufacturer EPC
Unit Price Request a Quote
In Stock 8,388
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 30 - Apr 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

EPC2018 Resources

Brand EPC
ECAD Module ECAD
Mfr. Part NumberEPC2018
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
EPC2018, EPC2018 Datasheet (Total Pages: 6, Size: 1,141.07 KB)
PDFEPC2018 Datasheet Cover
EPC2018 Datasheet Page 2 EPC2018 Datasheet Page 3 EPC2018 Datasheet Page 4 EPC2018 Datasheet Page 5 EPC2018 Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • EPC2018 Datasheet
  • where to find EPC2018
  • EPC

  • EPC EPC2018
  • EPC2018 PDF Datasheet
  • EPC2018 Stock

  • EPC2018 Pinout
  • Datasheet EPC2018
  • EPC2018 Supplier

  • EPC Distributor
  • EPC2018 Price
  • EPC2018 Distributor

EPC2018 Specifications

ManufacturerEPC
SerieseGaN®
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs25mOhm @ 6A, 5V
Vgs(th) (Max) @ Id2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs7.5nC @ 5V
Vgs (Max)+6V, -5V
Input Capacitance (Ciss) (Max) @ Vds540pF @ 100V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-40°C ~ 125°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDie
Package / CaseDie

The Products You May Be Interested In

FDC8601

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

2.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

109mOhm @ 2.7A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

210pF @ 50V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SuperSOT™-6

Package / Case

SOT-23-6 Thin, TSOT-23-6

IXTT96N20P

IXYS

Manufacturer

IXYS

Series

PolarHT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

96A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

24mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

145nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4800pF @ 25V

FET Feature

-

Power Dissipation (Max)

600W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-268

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

NTMFS4833NST1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SENSEFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

16A (Ta), 156A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

86nC @ 11.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5250pF @ 12V

FET Feature

-

Power Dissipation (Max)

900mW (Ta), 86.2W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SO-8FL

Package / Case

8-PowerTDFN

STP26N60M2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ M2

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

169W (Tc)

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

STF7NM60N

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

900mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

363pF @ 50V

FET Feature

-

Power Dissipation (Max)

20W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-5 Full Pack

Recently Sold

MAX15006AATT/V+T

MAX15006AATT/V+T

Maxim Integrated

IC REG LINEAR 3.3V 50MA 6TDFN

AD5254BRUZ1-RL7

AD5254BRUZ1-RL7

Analog Devices

IC DGTL POT 1KOHM 256TAP 20TSSOP

MPC9448ACR2

MPC9448ACR2

IDT, Integrated Device Technology

IC CLK BUFFER 1:12 350MHZ 32TQFP

M25PX16-VMW6TG TR

M25PX16-VMW6TG TR

Micron Technology Inc.

IC FLASH 16M SPI 75MHZ 8SO

BZT52C22-7-F

BZT52C22-7-F

Diodes Incorporated

DIODE ZENER 22V 500MW SOD123

0251002.NRT1L

0251002.NRT1L

Littelfuse

FUSE BRD MNT 2A 125VAC/VDC AXIAL

CS240610

CS240610

Powerex Inc.

DIODE GP 600V 100A POWRBLOK

SI2300DS-T1-GE3

SI2300DS-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 3.6A SOT-23

MT41K256M16HA-125 AIT:E

MT41K256M16HA-125 AIT:E

Micron Technology Inc.

IC DRAM 4G PARALLEL 96FBGA

XC6204B252MR-G

XC6204B252MR-G

Torex Semiconductor Ltd

IC REG LINEAR 2.5V 150MA SOT25

MX30LF1G18AC-XKI

MX30LF1G18AC-XKI

Macronix

IC FLASH 1G PARALLEL 63VFBGA

NUC2401MNTAG

NUC2401MNTAG

ON Semiconductor

CMC 100MA 2LN 90 OHM SMD