EPC2022
For Reference Only
Part Number | EPC2022 |
PNEDA Part # | EPC2022 |
Description | GAN TRANS 100V 3MOHM BUMPED DIE |
Manufacturer | EPC |
Unit Price | Request a Quote |
In Stock | 43,488 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 23 - Nov 28 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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EPC2022 Resources
Brand | EPC |
ECAD Module | |
Mfr. Part Number | EPC2022 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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EPC2022 Specifications
Manufacturer | EPC |
Series | eGaN® |
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Rds On (Max) @ Id, Vgs | 3.2mOhm @ 25A, 5V |
Vgs(th) (Max) @ Id | 2.5V @ 12mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | - |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Die |
Package / Case | Die |
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