Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
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Transistors - Special Purpose (162)

Records 64,903

Page 104/2164

Part Number	Description	In Stock
2N5770_D26Z ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V TO92-3 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: - Noise Figure (dB Typ @ f): 6dB @ 60MHz Gain: 15dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock7,074
2N5770_D27Z ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V TO92-3 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: - Noise Figure (dB Typ @ f): 6dB @ 60MHz Gain: 15dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock8,028
2N5770_D74Z ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V TO92-3 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: - Noise Figure (dB Typ @ f): 6dB @ 60MHz Gain: 15dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock6,174
2N5770_D75Z ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V TO92-3 Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: - Noise Figure (dB Typ @ f): 6dB @ 60MHz Gain: 15dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock8,118
2N918 Central Semiconductor Corp	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 600MHZ TO72 Manufacturer: Central Semiconductor Corp Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 6dB @ 60kHz Gain: - Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	In Stock15,438
2SA1748GRL Panasonic Electronic Components	Transistors - Bipolar (BJT) - RF RF TRANS PNP 50V 250MHZ SMINI3 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 250MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: SMini3-F2	In Stock2,988
2SA1790GCL Panasonic Electronic Components	Transistors - Bipolar (BJT) - RF RF TRANS PNP 20V 300MHZ SSMINI3 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 300MHz Noise Figure (dB Typ @ f): 2.8dB ~ 4dB @ 5MHz Gain: - Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F3	In Stock29,868
2SA1977-A CEL	Transistors - Bipolar (BJT) - RF RF TRANS PNP 12V 8.5GHZ SOT23 Manufacturer: CEL Series: - Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8.5GHz Noise Figure (dB Typ @ f): 1.5dB @ 1GHz Gain: 12dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 8V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: -	In Stock4,014
2SA1977-T1B-A CEL	Transistors - Bipolar (BJT) - RF RF TRANS PNP 12V 8.5GHZ SOT23 Manufacturer: CEL Series: - Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8.5GHz Noise Figure (dB Typ @ f): 1.5dB @ 1GHz Gain: 12dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 8V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	In Stock4,626
2SA1978-A CEL	Transistors - Bipolar (BJT) - RF RF TRANS PNP 12V 5.5GHZ SOT23 Manufacturer: CEL Series: - Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 2dB @ 1GHz Gain: 10dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: -	In Stock8,370
2SA1978-T1B-A CEL	Transistors - Bipolar (BJT) - RF RF TRANS PNP 12V 5.5GHZ SOT23 Manufacturer: CEL Series: - Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 2dB @ 1GHz Gain: 10dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	In Stock6,714
2SC22950BL Panasonic Electronic Components	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 250MHZ MINI3-G1 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 250MHz Noise Figure (dB Typ @ f): 2.8dB ~ 4dB @ 5MHz Gain: - Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1	In Stock7,344
2SC24040CL Panasonic Electronic Components	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 650MHZ MINI3-G1 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): 3.3dB @ 100MHz Gain: 24dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V Current - Collector (Ic) (Max): 15mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1	In Stock7,794
2SC24040DL Panasonic Electronic Components	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 650MHZ MINI3-G1 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): 3.3dB @ 100MHz Gain: 24dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V Current - Collector (Ic) (Max): 15mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1	In Stock5,346
2SC2714-O(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 30V 550MHZ SMINI Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 550MHz Noise Figure (dB Typ @ f): 2.5dB @ 100MHz Gain: 23dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	In Stock29,964
2SC2714-Y(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 30V 550MHZ SMINI Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 550MHz Noise Figure (dB Typ @ f): 2.5dB @ 100MHz Gain: 23dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	In Stock21,630
2SC27780CL Panasonic Electronic Components	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 230MHZ MINI3-G1 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 230MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1	In Stock22,956
2SC3356-A CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7GHZ SOT23 Manufacturer: CEL Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 11.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: -	In Stock4,950
2SC3356-T1B-R24-A CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7GHZ SOT23 Manufacturer: CEL Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 11.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	In Stock7,056
2SC3356-T1B-R25-A CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7GHZ SOT23-3 Manufacturer: CEL Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 11.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock7,560
2SC3357-A CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 6.5GHZ SOT89 Manufacturer: CEL Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6.5GHz Noise Figure (dB Typ @ f): 1.8dB @ 1GHz Gain: 9dB Power - Max: 1.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	In Stock6,192
2SC3357-T1-A CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 6.5GHZ SOT89 Manufacturer: CEL Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6.5GHz Noise Figure (dB Typ @ f): 1.8dB @ 1GHz Gain: 10dB Power - Max: 1.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	In Stock6,876
2SC3357-T1-RF-A CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 6.5GHZ SOT89 Manufacturer: CEL Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6.5GHz Noise Figure (dB Typ @ f): 1.8dB @ 1GHz Gain: 10dB Power - Max: 1.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	In Stock8,910
2SC3583-A CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 9GHZ SOT23-3 Manufacturer: CEL Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 15dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock2,106
2SC3583-T1B-A CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 9GHZ SOT23 Manufacturer: CEL Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 13dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	In Stock4,932
2SC3585-A CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 10GHZ SOT23 Manufacturer: CEL Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Gain: 10dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: -	In Stock7,380
2SC3585-T1B-A CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 10GHZ SOT23 Manufacturer: CEL Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Gain: 9dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	In Stock8,190
2SC39300CL Panasonic Electronic Components	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 250MHZ SMINI3 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 250MHz Noise Figure (dB Typ @ f): 2.8dB ~ 4dB @ 5MHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SMini3-G1	In Stock3,150
2SC39310CL Panasonic Electronic Components	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 650MHZ SMINI3 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): 3.3dB @ 100MHz Gain: 24dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V Current - Collector (Ic) (Max): 15mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SMini3-G1	In Stock2,502
2SC3931GCL Panasonic Electronic Components	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 650MHZ SMINI3 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): 3.3dB @ 100MHz Gain: 24dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V Current - Collector (Ic) (Max): 15mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: SMini3-F2	In Stock3,582

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