2SC2714-O(TE85L,F)
For Reference Only
| Part Number | 2SC2714-O(TE85L,F) |
| PNEDA Part # | 2SC2714-O-TE85L-F |
| Description | RF TRANS NPN 30V 550MHZ SMINI |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 29,964 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
2SC2714-O(TE85L Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
|
| Mfr. Part Number | 2SC2714-O(TE85L,F) |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- 2SC2714-O(TE85L,F) Datasheet
- where to find 2SC2714-O(TE85L,F)
- Toshiba Semiconductor and Storage
- Toshiba Semiconductor and Storage 2SC2714-O(TE85L,F)
- 2SC2714-O(TE85L,F) PDF Datasheet
- 2SC2714-O(TE85L,F) Stock
- 2SC2714-O(TE85L,F) Pinout
- Datasheet 2SC2714-O(TE85L,F)
- 2SC2714-O(TE85L,F) Supplier
- Toshiba Semiconductor and Storage Distributor
- 2SC2714-O(TE85L,F) Price
- 2SC2714-O(TE85L,F) Distributor
2SC2714-O(TE85L Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Frequency - Transition | 550MHz |
| Noise Figure (dB Typ @ f) | 2.5dB @ 100MHz |
| Gain | 23dB |
| Power - Max | 100mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 1mA, 6V |
| Current - Collector (Ic) (Max) | 20mA |
| Operating Temperature | 125°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | S-Mini |
The Products You May Be Interested In
|
Manufacturer NXP USA Inc. Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 5GHz Noise Figure (dB Typ @ f) 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz Gain - Power - Max 300mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA, 5V Current - Collector (Ic) (Max) 35mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package SOT-323-3 |
Manufacturer CEL Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 6GHz Noise Figure (dB Typ @ f) 2.3dB @ 1GHz Gain 8.3dB Power - Max 1.8W DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 50mA, 5V Current - Collector (Ic) (Max) 150mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-243AA Supplier Device Package SOT-89 |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 7GHz Noise Figure (dB Typ @ f) 1.1dB @ 1GHz Gain 12dB ~ 17dB Power - Max 100mW DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 10mA, 5V Current - Collector (Ic) (Max) 30mA Operating Temperature 125°C (TJ) Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package USM |
Manufacturer STMicroelectronics Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 18V Frequency - Transition - Noise Figure (dB Typ @ f) - Gain 6dB Power - Max 270W DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 5A, 5V Current - Collector (Ic) (Max) 20A Operating Temperature 200°C (TJ) Mounting Type Surface Mount Package / Case M111 Supplier Device Package M111 |
Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 16V Frequency - Transition 470MHz Noise Figure (dB Typ @ f) - Gain 12.5dB Power - Max 3W DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA, 5V Current - Collector (Ic) (Max) 500mA Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
