2N5770_D27Z
For Reference Only
| Part Number | 2N5770_D27Z |
| PNEDA Part # | 2N5770_D27Z |
| Description | RF TRANS NPN 15V TO92-3 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 8,028 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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2N5770_D27Z Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | 2N5770_D27Z |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
| Datasheet |
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2N5770_D27Z Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Frequency - Transition | - |
| Noise Figure (dB Typ @ f) | 6dB @ 60MHz |
| Gain | 15dB |
| Power - Max | 350mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 8mA, 10V |
| Current - Collector (Ic) (Max) | 50mA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package | TO-92-3 |
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Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 15V Frequency - Transition - Noise Figure (dB Typ @ f) 4.5dB @ 450MHz Gain 21dB Power - Max 200mW DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 3mA, 1V Current - Collector (Ic) (Max) 40mA Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Surface Mount Package / Case 3-SMD, No Lead Supplier Device Package UB |
