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Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Transistors

Records 64,903
Page 103/2164
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Part Number
Description
In Stock
Quantity
2224-6P
2224-6P

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock7,434
2225-4L
2225-4L

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 40V 2.5GHZ 55LV

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Frequency - Transition: 2.2GHz ~ 2.5GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.5dB
  • Power - Max: 10W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
  • Current - Collector (Ic) (Max): 600mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55LV
  • Supplier Device Package: 55LV
In Stock4,734
2301
2301

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 45V 2.3GHZ 55BT

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Frequency - Transition: 2.3GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB
  • Power - Max: 5.6W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 300mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55BT
  • Supplier Device Package: 55BT
In Stock8,244
2304
2304

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 45V 2.3GHZ 55BT

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Frequency - Transition: 2.3GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB
  • Power - Max: 10.2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
  • Current - Collector (Ic) (Max): 600mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55BT
  • Supplier Device Package: 55BT
In Stock14,108
2307
2307

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 42V 2.3GHZ 55BT

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 42V
  • Frequency - Transition: 2.3GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB
  • Power - Max: 20.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 1A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55BT
  • Supplier Device Package: 55BT
In Stock6,012
2324-20
2324-20

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS 40V 2.4GHZ 55AW

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Frequency - Transition: 2.3GHz ~ 2.4GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB
  • Power - Max: 58W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 160mA, 5V
  • Current - Collector (Ic) (Max): 3A
  • Operating Temperature: 200°C
  • Mounting Type: Chassis Mount
  • Package / Case: 55AW
  • Supplier Device Package: 55AW
In Stock4,644
23A005
23A005

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 22V 4.3GHZ 55BT

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 22V
  • Frequency - Transition: 4.3GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.5dB ~ 9.5dB
  • Power - Max: 3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55BT
  • Supplier Device Package: 55BT
In Stock4,374
23A008
23A008

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 22V 3.7GHZ 55BT

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 22V
  • Frequency - Transition: 3.7GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.5dB ~ 9.5dB
  • Power - Max: 5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55BT
  • Supplier Device Package: 55BT
In Stock4,896
23A025
23A025

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 22V 3.7GHZ 55BT

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 22V
  • Frequency - Transition: 3.7GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 6dB ~ 6.3dB
  • Power - Max: 9W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 420mA, 5V
  • Current - Collector (Ic) (Max): 1.2A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55BT
  • Supplier Device Package: 55BT
In Stock2,700
2731-200P
2731-200P

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS 3.1GHZ MODULE

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: 2.7GHz ~ 3.1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.7dB
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
In Stock3,598
2A5
2A5

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 22V 3.7GHZ 55ET

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 22V
  • Frequency - Transition: 3.4GHz ~ 3.7GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB ~ 9dB
  • Power - Max: 5.3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 3mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Stud Mount
  • Package / Case: 55ET
  • Supplier Device Package: 55ET
In Stock2,844
2A8
2A8

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 21V 2GHZ 55EU

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 21V
  • Frequency - Transition: 2GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB ~ 9dB
  • Power - Max: 5.3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 300mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55EU
  • Supplier Device Package: 55EU
In Stock5,076
2N2857
2N2857

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 500MHZ TO72

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 500MHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
  • Gain: 12.5dB ~ 21dB @ 450MHz
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72
In Stock4,140
2N2857
2N2857

MICROSS/On Semiconductor

Transistors - Bipolar (BJT) - RF

DIE RF TRANS NPN 15V

  • Manufacturer: MICROSS/On Semiconductor
  • Series: *
  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock4,266
2N2857
2N2857

Central Semiconductor Corp

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1.9GHZ TO72

  • Manufacturer: Central Semiconductor Corp
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.9GHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
  • Gain: -
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72
In Stock23,202
2N2857UB
2N2857UB

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 0.04A UB

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
  • Gain: 21dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
In Stock7,776
2N3663
2N3663

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 2.1GHZ TO92-3

  • Manufacturer: ON Semiconductor
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 2.1GHz
  • Noise Figure (dB Typ @ f): 6.5dB @ 60MHz
  • Gain: 1.5dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
In Stock5,346
2N3866
2N3866

Central Semiconductor Corp

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 30V 500MHZ TO39

  • Manufacturer: Central Semiconductor Corp
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 500MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock6,894
2N3866A
2N3866A

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 30V 400MHZ TO39

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 400MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock8,046
2N4427
2N4427

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 40V 500MHZ TO39

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Frequency - Transition: 500MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB @ 175MHz
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock5,760
2N4427
2N4427

Central Semiconductor Corp

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 500MHZ TO39

  • Manufacturer: Central Semiconductor Corp
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 500MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock22,332
2N4957
2N4957

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS PNP 30V 30MA TO72

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
  • Gain: 25dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-72-3 Metal Can
  • Supplier Device Package: TO-72
In Stock651
2N4957UB
2N4957UB

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS PNP 30V 30MA UB

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
  • Gain: 25dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
In Stock7,326
2N5031
2N5031

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 10V 400MHZ TO72

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 400MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 12dB @ 400MHz
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72
In Stock6,282
2N5109
2N5109

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 1.2GHZ TO39

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.2GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 12dB
  • Power - Max: 2.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock3,960
2N5109
2N5109

Central Semiconductor Corp

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 1.2GHZ TO39

  • Manufacturer: Central Semiconductor Corp
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.2GHz
  • Noise Figure (dB Typ @ f): 3dB @ 200MHz
  • Gain: -
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock25,038
2N5179
2N5179

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 200MHZ TO72

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 200MHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 200MHz
  • Gain: 20dB
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72
In Stock7,254
2N5179
2N5179

Central Semiconductor Corp

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 2GHZ TO72

  • Manufacturer: Central Semiconductor Corp
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 2GHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 200MHz
  • Gain: 15dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72
In Stock8,232
2N5770
2N5770

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V TO92-3

  • Manufacturer: ON Semiconductor
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 6dB @ 60MHz
  • Gain: 15dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
In Stock7,902
2N5770
2N5770

Central Semiconductor Corp

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 900MHZ TO92

  • Manufacturer: Central Semiconductor Corp
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 900MHz
  • Noise Figure (dB Typ @ f): 6dB @ 60MHz
  • Gain: -
  • Power - Max: 625mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
In Stock37,794