Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
Transistors - IGBTs - Modules (2,367)
Transistors - IGBTs - Single (3,305)
Transistors - JFETs (664)
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Transistors - Special Purpose (162)

Records 64,903

Page 107/2164

Part Number	Description	In Stock
2SC5015-T1-A CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 6V 12GHZ SOT343 Manufacturer: CEL Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Gain: 11dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	In Stock8,298
2SC501900L Panasonic Electronic Components	Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 6GHZ MINIP3-F1 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): 1.7dB @ 800MHz Gain: 7.5dB ~ 10dB Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MiniP3-F1	In Stock3,618
2SC5065-O(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7GHZ USM Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Gain: - Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	In Stock7,038
2SC5065-Y(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7GHZ USM Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 12dB ~ 17dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	In Stock23,124
2SC5066-O,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7GHZ SSM Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Gain: - Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	In Stock47,898
2SC5066-Y,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7GHZ SSM Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Gain: - Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	In Stock4,662
2SC5084-O(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7GHZ SMINI Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 11dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	In Stock8,064
2SC5084YTE85LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7GHZ SC59 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 11dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59	In Stock17,244
2SC5085-O(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7GHZ USM Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Gain: - Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	In Stock4,320
2SC5085-Y(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7GHZ USM Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 11dB ~ 16.5dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	In Stock2,754
2SC5086-O,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7GHZ SSM Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Gain: - Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	In Stock1,247,322
2SC5086-Y,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7GHZ SSM Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Gain: - Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	In Stock4,554
2SC5087-O(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7GHZ SMQ Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB ~ 1.1dB @ 500MHz ~ 1GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-61AA Supplier Device Package: SMQ	In Stock14,274
2SC5087R(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SMQ Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.1dB ~ 2dB @ 1GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-61AA Supplier Device Package: SMQ	In Stock28,608
2SC5087YTE85LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7GHZ SMQ Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 13dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-61AA Supplier Device Package: SMQ	In Stock3,060
2SC5088-O(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7GHZ USQ Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Gain: 18dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: USQ	In Stock5,292
2SC5095-O(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 10GHZ SC70 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Gain: 13dB ~ 7dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 6V Current - Collector (Ic) (Max): 15mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	In Stock6,048
2SC5095-R(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 10GHZ SC70 Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Gain: 13dB ~ 7.5dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V Current - Collector (Ic) (Max): 15mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	In Stock2,232
2SC5096-R,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 10GHZ SSM Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.4dB @ 1GHz Gain: 1.4dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V Current - Collector (Ic) (Max): 15mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	In Stock2,682
2SC5108-Y,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF TRANS RF NPN 10V 1GHZ SSM Manufacturer: Toshiba Semiconductor and Storage Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): - Gain: 11dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	In Stock3,204
2SC5226A-4-TL-E ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 7GHZ 3MCP Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 1GHz Gain: 12dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: 3-MCP	In Stock4,014
2SC5226A-5-TL-E ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 7GHZ 3MCP Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 1GHz Gain: 12dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: 3-MCP	In Stock4,716
2SC5227A-4-TB-E ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 7GHZ 3CP Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 1GHz Gain: 12dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-CP	In Stock3,834
2SC5227A-5-TB-E ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 7GHZ 3CP Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 1GHz Gain: 12dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-CP	In Stock2,160
2SC5231A-8-TL-E ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 7GHZ SMCP Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 1GHz Gain: 12dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SMCP	In Stock6,318
2SC5231A-9-TL-E ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 7GHZ SMCP Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 1GHz Gain: 12dB ~ 8.5dB @ 1GHz Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Gull Wing Supplier Device Package: SMCP	In Stock4,374
2SC5245A-4-TL-E ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 8GHZ 3MCP Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 3dB @ 1GHz ~ 1.5GHz Gain: 10dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: 3-MCP	In Stock4,122
2SC5277A-2-TL-E ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 8GHZ SMCP Manufacturer: ON Semiconductor Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.4dB ~ 0.9dB @ 1.5GHz ~ 1GHz Gain: 10dB ~ 5.5dB @ 1.5GHz Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SMCP	In Stock6,732
2SC5336-AZ CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 6.5GHZ SOT89 Manufacturer: CEL Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6.5GHz Noise Figure (dB Typ @ f): 1.8dB @ 1GHz Gain: 12dB Power - Max: 1.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: -	In Stock7,218
2SC5336-T1-AZ CEL	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 6.5GHZ SOT89 Manufacturer: CEL Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6.5GHz Noise Figure (dB Typ @ f): 1.8dB @ 1GHz Gain: 12dB Power - Max: 1.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	In Stock7,632

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