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2SC3356-T1B-R25-A

2SC3356-T1B-R25-A

For Reference Only

Part Number 2SC3356-T1B-R25-A
PNEDA Part # 2SC3356-T1B-R25-A
Description RF TRANS NPN 12V 7GHZ SOT23-3
Manufacturer CEL
Unit Price Request a Quote
In Stock 7,560
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 23 - Mar 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SC3356-T1B-R25-A Resources

Brand CEL
ECAD Module ECAD
Mfr. Part Number2SC3356-T1B-R25-A
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF
Datasheet
2SC3356-T1B-R25-A, 2SC3356-T1B-R25-A Datasheet (Total Pages: 9, Size: 2,238.37 KB)
PDF2SC3356-T1B-R25-A Datasheet Cover
2SC3356-T1B-R25-A Datasheet Page 2 2SC3356-T1B-R25-A Datasheet Page 3 2SC3356-T1B-R25-A Datasheet Page 4 2SC3356-T1B-R25-A Datasheet Page 5 2SC3356-T1B-R25-A Datasheet Page 6 2SC3356-T1B-R25-A Datasheet Page 7 2SC3356-T1B-R25-A Datasheet Page 8 2SC3356-T1B-R25-A Datasheet Page 9

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2SC3356-T1B-R25-A Specifications

ManufacturerCEL
Series-
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Frequency - Transition7GHz
Noise Figure (dB Typ @ f)1.1dB @ 1GHz
Gain11.5dB
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 20mA, 10V
Current - Collector (Ic) (Max)100mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3

The Products You May Be Interested In

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

1.1dB @ 2GHz

Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Operating Temperature

150°C (TJ)

Mounting Type

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Manufacturer

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

15V

Frequency - Transition

5.5GHz

Noise Figure (dB Typ @ f)

1.5dB ~ 2dB @ 500MHz ~ 1GHz

Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 50mA, 10V

Current - Collector (Ic) (Max)

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Operating Temperature

150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

SOT-89

CA3127M

Renesas Electronics America Inc.

Manufacturer

Renesas Electronics America Inc.

Series

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Transistor Type

5 NPN

Voltage - Collector Emitter Breakdown (Max)

15V

Frequency - Transition

1.15GHz

Noise Figure (dB Typ @ f)

3.5dB @ 100MHz

Gain

27dB ~ 30dB

Power - Max

85mW

DC Current Gain (hFE) (Min) @ Ic, Vce

35 @ 5mA, 6V

Current - Collector (Ic) (Max)

20mA

Operating Temperature

150°C (TJ)

Mounting Type

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Package / Case

16-SOIC (0.154", 3.90mm Width)

Supplier Device Package

16-SOIC

SD1332-05H

Microsemi

Manufacturer

Microsemi Corporation

Series

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Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

15V

Frequency - Transition

5.5GHz

Noise Figure (dB Typ @ f)

2.5dB @ 1GHz

Gain

17dB

Power - Max

180W

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 14mA, 10V

Current - Collector (Ic) (Max)

30A

Operating Temperature

200°C

Mounting Type

Surface Mount

Package / Case

M150

Supplier Device Package

M150

Manufacturer

NXP USA Inc.

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

2.8V

Frequency - Transition

45GHz

Noise Figure (dB Typ @ f)

0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz

Gain

-

Power - Max

220mW

DC Current Gain (hFE) (Min) @ Ic, Vce

155 @ 10mA, 2V

Current - Collector (Ic) (Max)

70mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-343F

Supplier Device Package

4-DFP

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