Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
Transistors - IGBTs - Modules (2,367)
Transistors - IGBTs - Single (3,305)
Transistors - JFETs (664)
Transistors - Programmable Unijunction (26)
Transistors - Special Purpose (162)

Records 64,903

Page 101/2164

Part Number	Description	In Stock
XP0431300L Panasonic Electronic Components	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SMINI6 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz, 80MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SMINI6-G1	In Stock7,236
XP0431400L Panasonic Electronic Components	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SMINI6 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz, 80MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SMINI6-G1	In Stock6,714
XP0431500L Panasonic Electronic Components	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SMINI6 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz, 80MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SMINI6-G1	In Stock7,344
XP0431600L Panasonic Electronic Components	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SMINI6 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz, 80MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SMINI6-G1	In Stock5,580
XP0431N00L Panasonic Electronic Components	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SMINI6 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz, 80MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SMINI6-G1	In Stock7,110
XP0438700L Panasonic Electronic Components	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SMINI6 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47kOhms, 1kOhms Resistor - Emitter Base (R2): 47kOhms, 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 30 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz, 80MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SMINI6-G1	In Stock8,676
XP0611100L Panasonic Electronic Components	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP SMINI6 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 80MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SMINI6-G1	In Stock8,082
XP0611300L Panasonic Electronic Components	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP SMINI6 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 80MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SMINI6-G1	In Stock6,012
XP0611500L Panasonic Electronic Components	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP SMINI6 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 80MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SMINI6-G1	In Stock3,222
XP0621000L Panasonic Electronic Components	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL NPN SMINI6 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SMINI6-G1	In Stock6,444
XP0621100L Panasonic Electronic Components	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL NPN SMINI6 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SMINI6-G1	In Stock6,498
XP0621200L Panasonic Electronic Components	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL NPN SMINI6 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SMINI6-G1	In Stock8,118
XP0621300L Panasonic Electronic Components	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL NPN SMINI6 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SMINI6-G1	In Stock25,266
XP0621400L Panasonic Electronic Components	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL NPN SMINI6 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SMINI6-G1	In Stock4,176
XP0621500L Panasonic Electronic Components	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL NPN SMINI6 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SMINI6-G1	In Stock5,022
XP0621600L Panasonic Electronic Components	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL NPN SMINI6 Manufacturer: Panasonic Electronic Components Series: - Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SMINI6-G1	In Stock2,376
0105-50 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 500MHZ 55JT Manufacturer: Microsemi Corporation Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 100MHz ~ 500MHz Noise Figure (dB Typ @ f): - Gain: 8.5dB ~ 10dB Power - Max: 140W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 7A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55JT Supplier Device Package: 55JT	In Stock3,420
0204-125 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 60V 400MHZ 55JT Manufacturer: Microsemi Corporation Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: 225MHz ~ 400MHz Noise Figure (dB Typ @ f): - Gain: 7dB ~ 8.5dB Power - Max: 270W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 16A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55JT Supplier Device Package: 55JT	In Stock189
0510-50A Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS 27V 1GHZ 55AV Manufacturer: Microsemi Corporation Series: - Transistor Type: - Voltage - Collector Emitter Breakdown (Max): 27V Frequency - Transition: 500MHz ~ 1GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 50W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 3.7A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AV Supplier Device Package: 55AV	In Stock8,082
0910-150M Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1GHZ 55KT Manufacturer: Microsemi Corporation Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 890MHz ~ 1GHz Noise Figure (dB Typ @ f): - Gain: 8.1dB ~ 8.5dB Power - Max: 400W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 12A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KT Supplier Device Package: 55KT	In Stock3,186
0910-60M Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1GHZ 55AW Manufacturer: Microsemi Corporation Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 890MHz ~ 1GHz Noise Figure (dB Typ @ f): - Gain: 8dB ~ 8.5dB Power - Max: 180W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	In Stock4,986
0912-25 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 55V 1.215GHZ 55CT Manufacturer: Microsemi Corporation Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 8.5dB ~ 10dB Power - Max: 125W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V Current - Collector (Ic) (Max): 2.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55CT Supplier Device Package: 55CT	In Stock5,850
0912-45 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 60V 1.215GHZ 55CT Manufacturer: Microsemi Corporation Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 8dB ~ 9dB Power - Max: 225W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V Current - Collector (Ic) (Max): 4.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55CT Supplier Device Package: 55CT	In Stock5,634
0912-7 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 60V 1.215GHZ 55CX Manufacturer: Microsemi Corporation Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 8.5dB Power - Max: 50W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55CX Supplier Device Package: 55CX	In Stock7,560
1000MA Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation Series: - Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock5,364
1000MP Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 1.15GHZ 55FW Manufacturer: Microsemi Corporation Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: 1.15GHz Noise Figure (dB Typ @ f): - Gain: 10.8dB Power - Max: 5.3W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 100mA, 5V Current - Collector (Ic) (Max): 300mA Operating Temperature: - Mounting Type: Chassis Mount Package / Case: 55FW Supplier Device Package: 55FW	In Stock8,208
1002MP Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS 50V 1.215GHZ 55FW-1 Manufacturer: Microsemi Corporation Series: - Transistor Type: - Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 8.24dB ~ 11dB Power - Max: 7W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 250mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55FW-1 Supplier Device Package: 55FW-1	In Stock7,848
1004MA Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation Series: - Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock3,402
1004MP Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS 50V 1.215GHZ 55FW-1 Manufacturer: Microsemi Corporation Series: - Transistor Type: - Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7dB ~ 9dB Power - Max: 7W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 300mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55FW-1 Supplier Device Package: 55FW-1	In Stock5,994
1014-12 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 50V 1.4GHZ 55LT Manufacturer: Microsemi Corporation Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 1GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 6.8dB Power - Max: 39W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V Current - Collector (Ic) (Max): 5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55LT Supplier Device Package: 55LT	In Stock7,578

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