Instant Offers

Part Number	Description	In Stock
APT12031JFLL Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 30A SOT-227 Manufacturer: Microsemi Corporation Series: POWER MOS 7® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 330mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 365nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 9480pF @ 25V FET Feature: - Power Dissipation (Max): 690AW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	In Stock5,453
MPF960 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 2A TO-92 Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.7Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	In Stock1,650
IRFM460 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 19A TO-254AA Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	In Stock391
IXFN50N120SIC IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: IXYS Series: - FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.2V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 20V Vgs (Max): +20V, -5V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 1000V FET Feature: - Power Dissipation (Max): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	In Stock787
IXFX38N80Q2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 38A PLUS247 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 220mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 8340pF @ 25V FET Feature: - Power Dissipation (Max): 735W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock117
IXTX20N150 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1500V 20A PLUS247 Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1Ohm @ 10A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 7800pF @ 25V FET Feature: - Power Dissipation (Max): 1250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock201
IXTN36N50 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 36A SOT-227 Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4V @ 20mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 400W (Tc) Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	In Stock101
IXFK32N100Q3 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 32A TO-264 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 6.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 9940pF @ 25V FET Feature: - Power Dissipation (Max): 1250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	In Stock182
IXFN210N20P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 188A SOT-227B Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 188A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 10.5mOhm @ 105A, 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 18600pF @ 25V FET Feature: - Power Dissipation (Max): 1070W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	In Stock133
IXFX32N100Q3 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 32A PLUS247 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 6.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 9940pF @ 25V FET Feature: - Power Dissipation (Max): 1250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock4,279
IXFN55N50F IXYS-RF	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 55A SOT227B Manufacturer: IXYS-RF Series: HiPerRF™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 85mOhm @ 27.5A, 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 25V FET Feature: - Power Dissipation (Max): 600W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	In Stock223
IXFB70N60Q2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 70A PLUS264 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 88mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 265nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V FET Feature: - Power Dissipation (Max): 890W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264™ Package / Case: TO-264-3, TO-264AA	In Stock44
IXFN56N90P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 56A SOT-227B Manufacturer: IXYS Series: Polar™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 135mOhm @ 28A, 10V Vgs(th) (Max) @ Id: 6.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 375nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V FET Feature: - Power Dissipation (Max): 1000W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	In Stock5,971
IXFN50N80Q2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 50A SOT-227B Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V FET Feature: - Power Dissipation (Max): 1135W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	In Stock14
IXTT1N450HV IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 4500V 1A TO268 Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 4500V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 85Ohm @ 50mA, 10V Vgs(th) (Max) @ Id: 6.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V FET Feature: - Power Dissipation (Max): 520W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	In Stock160
APTM10UM01FAG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 860A SP6 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 860A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.6mOhm @ 275A, 10V Vgs(th) (Max) @ Id: 4V @ 12mA Gate Charge (Qg) (Max) @ Vgs: 2100nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 60000pF @ 25V FET Feature: - Power Dissipation (Max): 2500W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP6 Package / Case: SP6	In Stock177
IXFN80N50 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 80A SOT-227B Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 55mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 9890pF @ 25V FET Feature: - Power Dissipation (Max): 700W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	In Stock41
EPC8009 EPC	Transistors - FETs, MOSFETs - Single GANFET TRANS 65V 2.7A BUMPED DIE Manufacturer: EPC Series: eGaN® FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 65V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 5V Vgs (Max): +6V, -4V Input Capacitance (Ciss) (Max) @ Vds: 52pF @ 32.5V FET Feature: - Power Dissipation (Max): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	In Stock3,960
SUD50N04-8M8P-4GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 14A TO-252 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 48.1W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock4,683
AUIRFS4127 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET NCH 200V 72A D2PAK Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 44A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5380pF @ 50V FET Feature: - Power Dissipation (Max): 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock7,589
IXFN110N60P3 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 90A SOT227 Manufacturer: IXYS Series: HiPerFET™, Polar3™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 56mOhm @ 55A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 245nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 25V FET Feature: - Power Dissipation (Max): 1500W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	In Stock41
EPC8010 EPC	Transistors - FETs, MOSFETs - Single GAN TRANS 100V 2.7A BUMPED DIE Manufacturer: EPC Series: eGaN® FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.48nC @ 5V Vgs (Max): +6V, -4V Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 50V FET Feature: - Power Dissipation (Max): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	In Stock1,642
IXTL2N450 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 4500V 2A I5PAK Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 4500V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 23Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 156nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V FET Feature: - Power Dissipation (Max): 220W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUSi5-Pak™ Package / Case: ISOPLUSi5-Pak™	In Stock1,710
IXTF1N450 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 4500V 0.9A I4PAK Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 4500V Current - Continuous Drain (Id) @ 25°C: 900mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 85Ohm @ 50mA, 10V Vgs(th) (Max) @ Id: 6.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V FET Feature: - Power Dissipation (Max): 160W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS i4-PAC™ Package / Case: i4-Pac™-5 (3 Leads)	In Stock7,246
IXFN60N80P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 53A SOT-227B Manufacturer: IXYS Series: PolarHV™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 140mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 25V FET Feature: - Power Dissipation (Max): 1040W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	In Stock87
IXFN360N10T IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 360A SOT-227B Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 360A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 505nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 36000pF @ 25V FET Feature: - Power Dissipation (Max): 830W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	In Stock1,567
EPC2012C EPC	Transistors - FETs, MOSFETs - Single GANFET TRANS 200V 5A BUMPED DIE Manufacturer: EPC Series: eGaN® FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V Vgs (Max): +6V, -4V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 100V FET Feature: - Power Dissipation (Max): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Outline (4-Solder Bar) Package / Case: Die	In Stock1,650
EPC2039 EPC	Transistors - FETs, MOSFETs - Single GANFET TRANS 80V BUMPED DIE Manufacturer: EPC Series: eGaN® FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 5V Vgs (Max): +6V, -4V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 40V FET Feature: - Power Dissipation (Max): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	In Stock4,786
EPC2014C EPC	Transistors - FETs, MOSFETs - Single GANFET TRANS 40V 10A BUMPED DIE Manufacturer: EPC Series: eGaN® FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V Vgs (Max): +6V, -4V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 20V FET Feature: - Power Dissipation (Max): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Outline (5-Solder Bar) Package / Case: Die	In Stock8,381
JANTX2N6989U Microsemi	Transistors - Bipolar (BJT) - Arrays TRANS 4NPN 50V 0.8A 20CLCC Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/559 Transistor Type: 4 NPN (Quad) Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 1W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 20-CLCC Supplier Device Package: 20-CLCC	In Stock183

APT12031JFLL

Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 1200V 30A SOT-227

Manufacturer: Microsemi Corporation
Series: POWER MOS 7®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 330mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 365nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 9480pF @ 25V
FET Feature: -
Power Dissipation (Max): 690AW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC

In Stock5,453

MPF960

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 2A TO-92

Manufacturer: ON Semiconductor
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA)

In Stock1,650

IRFM460

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 19A TO-254AA

Manufacturer: Infineon Technologies
Series: HEXFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)

In Stock391

IXFN50N120SIC

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH

Manufacturer: IXYS
Series: -
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 20V
Vgs (Max): +20V, -5V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 1000V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

In Stock787

IXFX38N80Q2

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 800V 38A PLUS247

Manufacturer: IXYS
Series: HiPerFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 220mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 8340pF @ 25V
FET Feature: -
Power Dissipation (Max): 735W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247™-3
Package / Case: TO-247-3

In Stock117

IXTX20N150

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 1500V 20A PLUS247

Manufacturer: IXYS
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1500V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1Ohm @ 10A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 7800pF @ 25V
FET Feature: -
Power Dissipation (Max): 1250W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247™-3
Package / Case: TO-247-3

In Stock201

IXTN36N50

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 36A SOT-227

Manufacturer: IXYS
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 4V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): 400W (Tc)
Operating Temperature: -
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

In Stock101

IXFK32N100Q3

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 1000V 32A TO-264

Manufacturer: IXYS
Series: HiPerFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 9940pF @ 25V
FET Feature: -
Power Dissipation (Max): 1250W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264AA (IXFK)
Package / Case: TO-264-3, TO-264AA

In Stock182

IXFN210N20P

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 188A SOT-227B

Manufacturer: IXYS
Series: HiPerFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 188A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 105A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 18600pF @ 25V
FET Feature: -
Power Dissipation (Max): 1070W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

In Stock133

IXFX32N100Q3

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 1000V 32A PLUS247

Manufacturer: IXYS
Series: HiPerFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 9940pF @ 25V
FET Feature: -
Power Dissipation (Max): 1250W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247™-3
Package / Case: TO-247-3

In Stock4,279

IXFN55N50F

IXYS-RF

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 55A SOT227B

Manufacturer: IXYS-RF
Series: HiPerRF™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 25V
FET Feature: -
Power Dissipation (Max): 600W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

In Stock223

IXFB70N60Q2

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 70A PLUS264

Manufacturer: IXYS
Series: HiPerFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 88mOhm @ 35A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 265nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V
FET Feature: -
Power Dissipation (Max): 890W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS264™
Package / Case: TO-264-3, TO-264AA

In Stock44

IXFN56N90P

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 900V 56A SOT-227B

Manufacturer: IXYS
Series: Polar™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 135mOhm @ 28A, 10V
Vgs(th) (Max) @ Id: 6.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 375nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V
FET Feature: -
Power Dissipation (Max): 1000W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

In Stock5,971

IXFN50N80Q2

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 800V 50A SOT-227B

Manufacturer: IXYS
Series: HiPerFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V
FET Feature: -
Power Dissipation (Max): 1135W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

In Stock14

IXTT1N450HV

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 4500V 1A TO268

Manufacturer: IXYS
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 4500V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 85Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V
FET Feature: -
Power Dissipation (Max): 520W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

In Stock160

APTM10UM01FAG

Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 860A SP6

Manufacturer: Microsemi Corporation
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 860A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 275A, 10V
Vgs(th) (Max) @ Id: 4V @ 12mA
Gate Charge (Qg) (Max) @ Vgs: 2100nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 60000pF @ 25V
FET Feature: -
Power Dissipation (Max): 2500W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP6
Package / Case: SP6

In Stock177

IXFN80N50

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 80A SOT-227B

Manufacturer: IXYS
Series: HiPerFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 9890pF @ 25V
FET Feature: -
Power Dissipation (Max): 700W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

In Stock41

EPC8009

EPC

Transistors - FETs, MOSFETs - Single

GANFET TRANS 65V 2.7A BUMPED DIE

Manufacturer: EPC
Series: eGaN®
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 65V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 5V
Vgs (Max): +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 52pF @ 32.5V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

In Stock3,960

SUD50N04-8M8P-4GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 14A TO-252

Manufacturer: Vishay Siliconix
Series: TrenchFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 20V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta), 48.1W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

In Stock4,683

AUIRFS4127

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET NCH 200V 72A D2PAK

Manufacturer: Infineon Technologies
Series: Automotive, AEC-Q101, HEXFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5380pF @ 50V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263AB)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

In Stock7,589

IXFN110N60P3

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 90A SOT227

Manufacturer: IXYS
Series: HiPerFET™, Polar3™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 56mOhm @ 55A, 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 245nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 25V
FET Feature: -
Power Dissipation (Max): 1500W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

In Stock41

EPC8010

EPC

Transistors - FETs, MOSFETs - Single

GAN TRANS 100V 2.7A BUMPED DIE

Manufacturer: EPC
Series: eGaN®
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.48nC @ 5V
Vgs (Max): +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 50V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

In Stock1,642

IXTL2N450

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 4500V 2A I5PAK

Manufacturer: IXYS
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 4500V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 23Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 156nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
FET Feature: -
Power Dissipation (Max): 220W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUSi5-Pak™
Package / Case: ISOPLUSi5-Pak™

In Stock1,710

IXTF1N450

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 4500V 0.9A I4PAK

Manufacturer: IXYS
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 4500V
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 85Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V
FET Feature: -
Power Dissipation (Max): 160W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS i4-PAC™
Package / Case: i4-Pac™-5 (3 Leads)

In Stock7,246

IXFN60N80P

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 800V 53A SOT-227B

Manufacturer: IXYS
Series: PolarHV™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 140mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 25V
FET Feature: -
Power Dissipation (Max): 1040W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

In Stock87

IXFN360N10T

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 360A SOT-227B

Manufacturer: IXYS
Series: HiPerFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 505nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 36000pF @ 25V
FET Feature: -
Power Dissipation (Max): 830W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

In Stock1,567

EPC2012C

EPC

Transistors - FETs, MOSFETs - Single

GANFET TRANS 200V 5A BUMPED DIE

Manufacturer: EPC
Series: eGaN®
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
Vgs (Max): +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 100V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die Outline (4-Solder Bar)
Package / Case: Die

In Stock1,650

EPC2039

EPC

Transistors - FETs, MOSFETs - Single

GANFET TRANS 80V BUMPED DIE

Manufacturer: EPC
Series: eGaN®
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 5V
Vgs (Max): +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 40V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

In Stock4,786

EPC2014C

EPC

Transistors - FETs, MOSFETs - Single

GANFET TRANS 40V 10A BUMPED DIE

Manufacturer: EPC
Series: eGaN®
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
Vgs (Max): +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 20V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die Outline (5-Solder Bar)
Package / Case: Die

In Stock8,381

JANTX2N6989U

Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 4NPN 50V 0.8A 20CLCC

Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/559
Transistor Type: 4 NPN (Quad)
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 20-CLCC
Supplier Device Package: 20-CLCC

In Stock183

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