Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXFN56N90P

IXFN56N90P

For Reference Only

Part Number IXFN56N90P
PNEDA Part # IXFN56N90P
Description MOSFET N-CH 900V 56A SOT-227B
Manufacturer IXYS
Unit Price
1 ---------- $631.9665
50 ---------- $602.3430
100 ---------- $572.7196
200 ---------- $543.0962
400 ---------- $518.4100
500 ---------- $493.7238
In Stock 5,971
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN56N90P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN56N90P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN56N90P, IXFN56N90P Datasheet (Total Pages: 4, Size: 109.66 KB)
PDFIXFN56N90P Datasheet Cover
IXFN56N90P Datasheet Page 2 IXFN56N90P Datasheet Page 3 IXFN56N90P Datasheet Page 4

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXFN56N90P Datasheet
  • where to find IXFN56N90P
  • IXYS

  • IXYS IXFN56N90P
  • IXFN56N90P PDF Datasheet
  • IXFN56N90P Stock

  • IXFN56N90P Pinout
  • Datasheet IXFN56N90P
  • IXFN56N90P Supplier

  • IXYS Distributor
  • IXFN56N90P Price
  • IXFN56N90P Distributor

IXFN56N90P Specifications

ManufacturerIXYS
SeriesPolar™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs135mOhm @ 28A, 10V
Vgs(th) (Max) @ Id6.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs375nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds23000pF @ 25V
FET Feature-
Power Dissipation (Max)1000W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

The Products You May Be Interested In

DMTH3004LFGQ-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

15A (Ta), 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

44nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

2370pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 50W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI3333-8

Package / Case

8-PowerVDFN

SI3483DV-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

35mOhm @ 6.2A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.14W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6 Thin, TSOT-23-6

SPB80N06S2-08

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8mOhm @ 58A, 10V

Vgs(th) (Max) @ Id

4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

96nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3800pF @ 25V

FET Feature

-

Power Dissipation (Max)

215W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPU80R750P7AKMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

750mOhm @ 2.7A, 10V

Vgs(th) (Max) @ Id

3.5V @ 140µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

460pF @ 500V

FET Feature

-

Power Dissipation (Max)

51W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO251-3

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

DMP3056LSS-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

7.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

45mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.8nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

722pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP

Package / Case

8-SOIC (0.154", 3.90mm Width)

Recently Sold

MAX6817EUT+T

MAX6817EUT+T

Maxim Integrated

IC DEBOUNCER SWITCH DUAL SOT23-6

PD70200ILD-TR

PD70200ILD-TR

Microsemi

IC POE DRIVER PD PSE 12DFN

SMCJ70CA-E3/57T

SMCJ70CA-E3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 70V 113V DO214AB

NTJD5121NT1G

NTJD5121NT1G

ON Semiconductor

MOSFET 2N-CH 60V 0.295A SOT363

PCMB063T-3R3MS

PCMB063T-3R3MS

Susumu

FIXED IND 3.3UH 6A 30 MOHM SMD

74HC160N,652

74HC160N,652

NXP

IC SYNC BCD DECADE COUNT 16DIP

NC7SZ00P5X

NC7SZ00P5X

ON Semiconductor

IC GATE NAND 1CH 2-INP SC70-5

DG212BDY

DG212BDY

Vishay Siliconix

IC SWITCH QUAD SPST 16SOIC

5KP30A

5KP30A

Littelfuse

TVS DIODE 30V 48.4V P600

AUIRF1010ZS

AUIRF1010ZS

Infineon Technologies

MOSFET N-CH 55V 75A D2PAK

NC7WZ17P6

NC7WZ17P6

ON Semiconductor

IC BUF NON-INVERT 5.5V SC70-6

1N5614

1N5614

Semtech

DIODE GEN PURP 200V 2A AXIAL