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Part Number
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In Stock
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SG2023J-883B
SG2023J-883B

Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 7NPN DARL 95V 0.5A 16JDIP

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 95V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: -
  • Supplier Device Package: 16-CDIP
In Stock51
SG2013J-883B
SG2013J-883B

Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS 7NPN DARL 50V 0.6A 16JDIP

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.9V @ 600µA, 500mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 900 @ 500mA, 2V
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: -
  • Supplier Device Package: 16-CDIP
In Stock28,074
STD845DN40
STD845DN40

STMicroelectronics

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 400V 4A 8DIP

  • Manufacturer: STMicroelectronics
  • Series: -
  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1A, 4A
  • Current - Collector Cutoff (Max): 250µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 2A, 5V
  • Power - Max: 3W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
In Stock336
MD2219A
MD2219A

Central Semiconductor Corp

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 30V 0.5A TO-78

  • Manufacturer: Central Semiconductor Corp
  • Series: -
  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: -
  • Frequency - Transition: 200MHz
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
In Stock1,703
JANTX2N4854
JANTX2N4854

Microsemi

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 40V 0.6A TO78

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/421
  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 600mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
In Stock249
MAT12AHZ
MAT12AHZ

Analog Devices

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 40V 0.02A TO78-6

  • Manufacturer: Analog Devices Inc.
  • Series: -
  • Transistor Type: 2 NPN (Dual) Matched Pair
  • Current - Collector (Ic) (Max): 20mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 500pA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: 200MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
In Stock90
JANTXV2N6678
JANTXV2N6678

M/A-Com Technology Solutions

Transistors - Bipolar (BJT) - Single

DIODE

  • Manufacturer: M/A-Com Technology Solutions
  • Series: Military, MIL-PRF-19500/538
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 3A, 15A
  • Current - Collector Cutoff (Max): 1mA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 3V
  • Power - Max: 6W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3 (TO-204AA)
In Stock888
JANTX2N6287
JANTX2N6287

M/A-Com Technology Solutions

Transistors - Bipolar (BJT) - Single

DIODE

  • Manufacturer: M/A-Com Technology Solutions
  • Series: Military, MIL-PRF-19500/505
  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 20A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
  • Power - Max: 175W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
In Stock323
JANTX2N3868
JANTX2N3868

M/A-Com Technology Solutions

Transistors - Bipolar (BJT) - Single

DIODE

  • Manufacturer: M/A-Com Technology Solutions
  • Series: *
  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
In Stock312
JANTX2N3741
JANTX2N3741

M/A-Com Technology Solutions

Transistors - Bipolar (BJT) - Single

TRANS PNP 80V 4A TO-66

  • Manufacturer: M/A-Com Technology Solutions
  • Series: Military, MIL-PRF-19500/441
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 1.25mA, 1A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
  • Power - Max: 3W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-213AA, TO-66-2
  • Supplier Device Package: TO-66 (TO-213AA)
In Stock18
JAN2N918
JAN2N918

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 15V 0.05A TO72

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/301
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
  • Power - Max: 200mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-72-3 Metal Can
  • Supplier Device Package: TO-72
In Stock2,320
JANTXV2N6546
JANTXV2N6546

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 300V 15A TO3

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/525
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 5V @ 3A, 15A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 5A, 2V
  • Power - Max: 175W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204AA (TO-3)
In Stock202
JAN2N6284
JAN2N6284

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN DARL 100V 20A TO-3

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/504
  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 20A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1250 @ 10A, 3V
  • Power - Max: 175W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3
  • Supplier Device Package: TO-3 (TO-204AA)
In Stock84
JANTXV2N5667S
JANTXV2N5667S

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 300V 5A TO39

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/455
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
  • Current - Collector Cutoff (Max): 200nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V
  • Power - Max: 1.2W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
In Stock239
JANTXV2N3749
JANTXV2N3749

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 80V 5A TO111

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/315
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
  • Current - Collector Cutoff (Max): 20µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Stud Mount
  • Package / Case: TO-111-4, Stud
  • Supplier Device Package: TO-111
In Stock218
JAN2N6437
JAN2N6437

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 100V 25A

  • Manufacturer: Microsemi Corporation
  • Series: *
  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock116
JAN2N6353
JAN2N6353

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN DARL 150V 5A TO-33

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/472
  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 10mA, 5A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 5V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-213AA, TO-66-3
  • Supplier Device Package: TO-66 (TO-213AA)
In Stock504
JANTX2N6351
JANTX2N6351

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN DARL 150V 5A TO-33

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/472
  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 10mA, 5A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 5V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AC, TO-33-4 Metal Can
  • Supplier Device Package: TO-33
In Stock2,665
JAN2N6277
JAN2N6277

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 150V 50A TO-3

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/514
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50A
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 10A, 50A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20A, 4V
  • Power - Max: 250W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3 (TO-204AA)
In Stock5,817
JANTX2N5745
JANTX2N5745

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 80V 20A TO-3

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/433
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 20A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 10A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 2V
  • Power - Max: 5W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3 (TO-204AA)
In Stock104
JANTX2N5685
JANTX2N5685

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 60V 50A TO-3

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/464
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A
  • Current - Collector Cutoff (Max): 500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 25A, 2V
  • Power - Max: 300W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3 (TO-204AA)
In Stock308
JAN2N5685
JAN2N5685

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 60V 50A TO-3

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/464
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A
  • Current - Collector Cutoff (Max): 500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 25A, 2V
  • Power - Max: 300W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3 (TO-204AA)
In Stock470
JANTXV2N5672
JANTXV2N5672

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 120V 30A TO-3

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/488
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 30A
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 5V @ 6A, 30A
  • Current - Collector Cutoff (Max): 10mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15A, 2V
  • Power - Max: 6W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3 (TO-204AA)
In Stock57
JANS2N5416U4
JANS2N5416U4

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 300V 1A

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/485
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: U4
In Stock5,768
JANS2N5415UA
JANS2N5415UA

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 200V 1A TO-5

  • Manufacturer: Microsemi Corporation
  • Series: *
  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock8
JAN2N3764
JAN2N3764

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 40V 1.5A TO-39

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/396
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 1.5V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AB, TO-46-3 Metal Can
  • Supplier Device Package: TO-46 (TO-206AB)
In Stock62
JAN2N1711
JAN2N1711

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 30V 0.5A TO-39

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/225
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 800mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
In Stock86
JAN2N1479
JAN2N1479

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 60V 1.5A

  • Manufacturer: Microsemi Corporation
  • Series: *
  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock4,276
JANTXV2N5662
JANTXV2N5662

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 200V 2A TO-5

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/454
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 200V
  • Vce Saturation (Max) @ Ib, Ic: 800mV @ 400mA, 2A
  • Current - Collector Cutoff (Max): 200nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
In Stock237
JANTX2N6650
JANTX2N6650

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP DARL 80V 10A TO-3

  • Manufacturer: Microsemi Corporation
  • Series: Military, MIL-PRF-19500/527
  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 100µA, 10A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
  • Power - Max: 5W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204AA (TO-3)
In Stock1,834