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IXFN50N120SIC

IXFN50N120SIC

For Reference Only

Part Number IXFN50N120SIC
PNEDA Part # IXFN50N120SIC
Description MOSFET N-CH
Manufacturer IXYS
Unit Price
1 ---------- $893.4358
50 ---------- $851.5560
100 ---------- $809.6762
200 ---------- $767.7964
400 ---------- $732.8965
500 ---------- $697.9967
In Stock 787
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN50N120SIC Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN50N120SIC
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN50N120SIC, IXFN50N120SIC Datasheet (Total Pages: 7, Size: 467.06 KB)
PDFIXFN50N120SIC Datasheet Cover
IXFN50N120SIC Datasheet Page 2 IXFN50N120SIC Datasheet Page 3 IXFN50N120SIC Datasheet Page 4 IXFN50N120SIC Datasheet Page 5 IXFN50N120SIC Datasheet Page 6 IXFN50N120SIC Datasheet Page 7

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IXFN50N120SIC Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id2.2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs100nC @ 20V
Vgs (Max)+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds1900pF @ 1000V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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