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IXFX32N100Q3

IXFX32N100Q3

For Reference Only

Part Number IXFX32N100Q3
PNEDA Part # IXFX32N100Q3
Description MOSFET N-CH 1000V 32A PLUS247
Manufacturer IXYS
Unit Price
1 ---------- $275.7315
50 ---------- $262.8065
100 ---------- $249.8816
200 ---------- $236.9567
400 ---------- $226.1860
500 ---------- $215.4152
In Stock 4,279
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFX32N100Q3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFX32N100Q3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFX32N100Q3, IXFX32N100Q3 Datasheet (Total Pages: 5, Size: 125.53 KB)
PDFIXFK32N100Q3 Datasheet Cover
IXFK32N100Q3 Datasheet Page 2 IXFK32N100Q3 Datasheet Page 3 IXFK32N100Q3 Datasheet Page 4 IXFK32N100Q3 Datasheet Page 5

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IXFX32N100Q3 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs320mOhm @ 16A, 10V
Vgs(th) (Max) @ Id6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs195nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds9940pF @ 25V
FET Feature-
Power Dissipation (Max)1250W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePLUS247™-3
Package / CaseTO-247-3

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