STGW30NC60KD
For Reference Only
| Part Number | STGW30NC60KD | ||||||||||||||||||
| PNEDA Part # | STGW30NC60KD | ||||||||||||||||||
| Description | IGBT 600V 60A 200W TO247 | ||||||||||||||||||
| Manufacturer | STMicroelectronics | ||||||||||||||||||
| Unit Price |
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| In Stock | 793 | ||||||||||||||||||
| Warehouses | Shipped from Hong Kong SAR | ||||||||||||||||||
| Estimated Delivery | Apr 2 - Apr 7 (Choose Expedited Shipping) | ||||||||||||||||||
| Guarantee | Up to 1 year [PNEDA-Warranty]* | ||||||||||||||||||
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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STGW30NC60KD Resources
| Brand | STMicroelectronics |
| ECAD Module |
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| Mfr. Part Number | STGW30NC60KD |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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Logistics Mode
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Notes
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STGW30NC60KD Specifications
| Manufacturer | STMicroelectronics |
| Series | PowerMESH™ |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 60A |
| Current - Collector Pulsed (Icm) | 125A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 20A |
| Power - Max | 200W |
| Switching Energy | 350µJ (on), 435µJ (off) |
| Input Type | Standard |
| Gate Charge | 96nC |
| Td (on/off) @ 25°C | 29ns/120ns |
| Test Condition | 480V, 20A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 40ns |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
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Manufacturer STMicroelectronics Series PowerMESH™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 40A Current - Collector Pulsed (Icm) - Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 12A Power - Max 130W Switching Energy 81µJ (on), 125µJ (off) Input Type Standard Gate Charge 53nC Td (on/off) @ 25°C 25ns/90ns Test Condition 390V, 12A, 10Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220 |
Manufacturer Microsemi Corporation Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 54A Current - Collector Pulsed (Icm) 113A Vce(on) (Max) @ Vge, Ic 3.15V @ 15V, 30A Power - Max 250W Switching Energy 570µJ (off) Input Type Standard Gate Charge 145nC Td (on/off) @ 25°C 16ns/360ns Test Condition 400V, 30A, 9.1Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220 |
Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 20A Current - Collector Pulsed (Icm) 40A Vce(on) (Max) @ Vge, Ic 4.2V @ 15V, 10A Power - Max 100W Switching Energy 640µJ (on), 920µJ (off) Input Type Standard Gate Charge 53nC Td (on/off) @ 25°C 28ns/200ns Test Condition 960V, 10A, 23Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247AC |
