Infineon Technologies Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
Records 6,749
Page 223/225
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 120V SAWN WAFER |
7,164 |
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Infineon Technologies |
MOSFET N-CH 80V SAWN WAFER |
2,106 |
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Infineon Technologies |
MOSFET N CH 55V 16A DPAK |
7,920 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 16A (Tc) | 4.5V, 10V | 58mOhm @ 9.6A, 10V | 3V @ 250µA | 9.9nC @ 5V | ±16V | 380pF @ 25V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH TO262-3 |
7,290 |
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Infineon Technologies |
MOSFET N-CH TO262-3 |
5,886 |
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Infineon Technologies |
MOSFET N-CH 1TO251-3 |
8,586 |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
6,318 |
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Infineon Technologies |
MOSFET SOT223-4 |
8,244 |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
3,690 |
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Infineon Technologies |
MOSFET N-CH TO252-5 |
4,698 |
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Infineon Technologies |
MOSFET N-CH TO220-3 |
7,416 |
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Infineon Technologies |
MOSFET N-CH TO220 |
6,606 |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
6,156 |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
4,410 |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
2,394 |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
7,200 |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
7,596 |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
7,344 |
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Infineon Technologies |
MOSFET N-CH |
6,354 |
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Infineon Technologies |
MOSFET N-CH |
6,930 |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
4,806 |
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Infineon Technologies |
MOSFET N-CH |
7,650 |
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Infineon Technologies |
MOSFET N-CH |
8,442 |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
3,654 |
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Infineon Technologies |
MOSFET N-CH |
3,924 |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
3,024 |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
7,668 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
6,642 |
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Infineon Technologies |
MOSFET N-CH 500V 7.1A TO251-3 |
5,922 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 7.1A (Tc) | 10V | 520mOhm @ 3.8A, 10V | 3.5V @ 250µA | 17nC @ 10V | ±20V | 680pF @ 100V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH |
4,788 |
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