Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPC60R099C6UNSAWNX6SA1

IPC60R099C6UNSAWNX6SA1

For Reference Only

Part Number IPC60R099C6UNSAWNX6SA1
PNEDA Part # IPC60R099C6UNSAWNX6SA1
Description MOSFET N-CH BARE DIE
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,394
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 30 - Dec 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPC60R099C6UNSAWNX6SA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPC60R099C6UNSAWNX6SA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPC60R099C6UNSAWNX6SA1 Datasheet
  • where to find IPC60R099C6UNSAWNX6SA1
  • Infineon Technologies

  • Infineon Technologies IPC60R099C6UNSAWNX6SA1
  • IPC60R099C6UNSAWNX6SA1 PDF Datasheet
  • IPC60R099C6UNSAWNX6SA1 Stock

  • IPC60R099C6UNSAWNX6SA1 Pinout
  • Datasheet IPC60R099C6UNSAWNX6SA1
  • IPC60R099C6UNSAWNX6SA1 Supplier

  • Infineon Technologies Distributor
  • IPC60R099C6UNSAWNX6SA1 Price
  • IPC60R099C6UNSAWNX6SA1 Distributor

IPC60R099C6UNSAWNX6SA1 Specifications

ManufacturerInfineon Technologies
Series-
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

The Products You May Be Interested In

IRF7475TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

11A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.8V, 4.5V

Rds On (Max) @ Id, Vgs

15mOhm @ 8.8A, 4.5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

1590pF @ 6V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

IRFU4510PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

56A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

13.9mOhm @ 38A, 10V

Vgs(th) (Max) @ Id

4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

81nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3031pF @ 50V

FET Feature

-

Power Dissipation (Max)

143W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

IPAK (TO-251)

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

DMT34M2LPS-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

PowerDI5060-8

Package / Case

8-PowerTDFN

DMT10H072LFDF-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

62mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5.1nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

266pF @ 50V

FET Feature

-

Power Dissipation (Max)

800mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

U-DFN2020-6

Package / Case

6-UDFN Exposed Pad

STF6NK70Z

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

700V

Current - Continuous Drain (Id) @ 25°C

5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.8Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

47nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

930pF @ 25V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack

Recently Sold

IXFK44N80P

IXFK44N80P

IXYS

MOSFET N-CH 800V 44A TO-264

FDC5614P

FDC5614P

ON Semiconductor

MOSFET P-CH 60V 3A SSOT-6

H5120NL

H5120NL

Pulse Electronics Network

MODULE XFORMR SNGL GIGABIT SMD

XC95288XL-10TQ144C

XC95288XL-10TQ144C

Xilinx

IC CPLD 288MC 10NS 144TQFP

2873000202

2873000202

Fair-Rite Products

FERRITE CORE MULTI-APERTURE

KSZ8863MLLI

KSZ8863MLLI

Microchip Technology

IC ETHERNET SWITCH 3PORT 48-LQFP

AT25256B-SSHL-T

AT25256B-SSHL-T

Microchip Technology

IC EEPROM 256K SPI 20MHZ 8SOIC

AQY221R2VY

AQY221R2VY

Panasonic Electric Works

SSR RELAY SPST-NO 250MA 0-40V

ADUM1400CRWZ

ADUM1400CRWZ

Analog Devices

DGTL ISO 2.5KV GEN PURP 16SOIC

SMBJ15A

SMBJ15A

Microsemi

TVS DIODE 15V 24.4V DO214AA

OKL-T/6-W12P-C

OKL-T/6-W12P-C

Murata Power Solutions

DC DC CONVERTER 0.591-5.5V 30W

MAX1953EUB+

MAX1953EUB+

Maxim Integrated

IC REG CTRLR BUCK 10UMAX