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IPC26N12NX2SA1

IPC26N12NX2SA1

For Reference Only

Part Number IPC26N12NX2SA1
PNEDA Part # IPC26N12NX2SA1
Description MOSFET N-CH 120V SAWN WAFER
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,164
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPC26N12NX2SA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPC26N12NX2SA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPC26N12NX2SA1 Specifications

ManufacturerInfineon Technologies
Series*
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

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Power Dissipation (Max)

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Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

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