Infineon Technologies Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
Records 6,749
Page 222/225
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
LOW POWER_LEGACY |
7,722 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
LOW POWER_LEGACY |
5,256 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
LOW POWER_LEGACY |
4,554 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
LOW POWER_LEGACY |
8,262 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
LOW POWER_LEGACY |
5,058 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
LOW POWER_LEGACY |
6,534 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
LOW POWER_LEGACY |
8,748 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
LOW POWER_LEGACY |
8,514 |
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Infineon Technologies |
LOW POWER_LEGACY |
3,402 |
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Infineon Technologies |
LOW POWER_LEGACY |
3,544 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
LOW POWER_LEGACY |
6,696 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
LOW POWER_LEGACY |
3,762 |
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Infineon Technologies |
LV POWER MOS |
8,172 |
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Infineon Technologies |
MOSFET N-CHANNEL_55/60V |
2,448 |
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Infineon Technologies |
MOSFET N-CHANNEL_55/60V |
4,662 |
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Infineon Technologies |
MOSFET N-CH 30V 90A TO251-3 |
5,526 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 4mOhm @ 30A, 10V | 2.2V @ 250µA | 38nC @ 10V | - | 3900pF @ 15V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
|
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Infineon Technologies |
MOSFET N-CHANNEL 30V 50A TO251-3 |
5,346 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 5mOhm @ 30A, 10V | 2.2V @ 250µA | 31nC @ 10V | - | 3200pF @ 15V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
|
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Infineon Technologies |
MOSFET N-CHANNEL 30V 50A TO251-3 |
4,500 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 6mOhm @ 30A, 10V | 2.2V @ 250µA | 23nC @ 10V | - | 2400pF @ 15V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
|
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Infineon Technologies |
MOSFET N-CHANNEL 30V 50A TO251-3 |
2,520 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 7.5mOhm @ 30A, 10V | 2.2V @ 250µA | 18nC @ 10V | - | 1900pF @ 15V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
|
|
|
Infineon Technologies |
MOSFET N-CHANNEL 30V 40A TO251-3 |
4,986 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2.2V @ 250µA | 15nC @ 10V | ±20V | 1600pF @ 15V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
|
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Infineon Technologies |
MOSFET N-CH 650V 76A TO247-4 |
3,600 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 76A (Tc) | 10V | 37mOhm @ 29.5A, 10V | 4V @ 1.48mA | 121nC @ 10V | ±20V | 5243pF @ 400V | - | 255W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
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Infineon Technologies |
MOSFET COOL MOS 600V |
7,848 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET COOL MOS 600V |
4,140 |
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Infineon Technologies |
MOSFET N-CH 100V 1.2A SOT223-4 |
2,574 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 1.2A (Ta) | 4.5V, 10V | 600mOhm @ 1.2A, 10V | 1.8V @ 100µA | 6.7nC @ 10V | ±20V | 152.7pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
5,022 |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
5,292 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
2,016 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
7,488 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
8,766 |
|
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Infineon Technologies |
TRANSISTOR N-CH |
4,842 |
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