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IPS70R2K0CEE8211

IPS70R2K0CEE8211

For Reference Only

Part Number IPS70R2K0CEE8211
PNEDA Part # IPS70R2K0CEE8211
Description MOSFET N-CH
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,788
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPS70R2K0CEE8211 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPS70R2K0CEE8211
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPS70R2K0CEE8211, IPS70R2K0CEE8211 Datasheet (Total Pages: 14, Size: 931.49 KB)
PDFIPS70R2K0CEE8211 Datasheet Cover
IPS70R2K0CEE8211 Datasheet Page 2 IPS70R2K0CEE8211 Datasheet Page 3 IPS70R2K0CEE8211 Datasheet Page 4 IPS70R2K0CEE8211 Datasheet Page 5 IPS70R2K0CEE8211 Datasheet Page 6 IPS70R2K0CEE8211 Datasheet Page 7 IPS70R2K0CEE8211 Datasheet Page 8 IPS70R2K0CEE8211 Datasheet Page 9 IPS70R2K0CEE8211 Datasheet Page 10 IPS70R2K0CEE8211 Datasheet Page 11

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IPS70R2K0CEE8211 Specifications

ManufacturerInfineon Technologies
Series-
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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FET Type

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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