BSP615S2LHUMA1
For Reference Only
Part Number | BSP615S2LHUMA1 |
PNEDA Part # | BSP615S2LHUMA1 |
Description | MOSFET SOT223-4 |
Manufacturer | Infineon Technologies |
Unit Price | Request a Quote |
In Stock | 8,244 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 28 - Dec 3 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
BSP615S2LHUMA1 Resources
Brand | Infineon Technologies |
ECAD Module | |
Mfr. Part Number | BSP615S2LHUMA1 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- BSP615S2LHUMA1 Datasheet
- where to find BSP615S2LHUMA1
- Infineon Technologies
- Infineon Technologies BSP615S2LHUMA1
- BSP615S2LHUMA1 PDF Datasheet
- BSP615S2LHUMA1 Stock
- BSP615S2LHUMA1 Pinout
- Datasheet BSP615S2LHUMA1
- BSP615S2LHUMA1 Supplier
- Infineon Technologies Distributor
- BSP615S2LHUMA1 Price
- BSP615S2LHUMA1 Distributor
BSP615S2LHUMA1 Specifications
Manufacturer | Infineon Technologies |
Series | - |
FET Type | - |
Technology | - |
Drain to Source Voltage (Vdss) | - |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | - |
Rds On (Max) @ Id, Vgs | - |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | - |
Input Capacitance (Ciss) (Max) @ Vds | - |
FET Feature | - |
Power Dissipation (Max) | - |
Operating Temperature | - |
Mounting Type | - |
Supplier Device Package | - |
Package / Case | - |
The Products You May Be Interested In
ON Semiconductor Manufacturer ON Semiconductor Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 9.4A (Ta), 27A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 17.3mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id 3.5V @ 20µA Gate Charge (Qg) (Max) @ Vgs 6.3nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 325pF @ 25V FET Feature - Power Dissipation (Max) 2.9W (Ta), 23W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-WDFN (3.3x3.3) Package / Case 8-PowerWDFN |
Infineon Technologies Manufacturer Infineon Technologies Series OptiMOS™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 80mOhm @ 2A, 10V Vgs(th) (Max) @ Id 2V @ 11µA Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 500pF @ 15V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3 |
Toshiba Semiconductor and Storage Manufacturer Toshiba Semiconductor and Storage Series U-MOSV FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 46mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 8.1nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 640pF @ 10V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package UFM Package / Case 3-SMD, Flat Leads |
IXYS Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 90A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 38mOhm @ 45A, 10V Vgs(th) (Max) @ Id 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 210nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 8500pF @ 25V FET Feature - Power Dissipation (Max) 1100W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PLUS247™-3 Package / Case TO-247-3 |
Microsemi Manufacturer Microsemi Corporation Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 300V Current - Continuous Drain (Id) @ 25°C 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 85mOhm @ 500mA, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 195nC @ 10V Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 4950pF @ 25V FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type Surface Mount Supplier Device Package D3 [S] Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |