Infineon Technologies Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
Records 6,749
Page 224/225
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Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH |
6,732 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH |
5,004 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH |
5,166 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 600V 4.5A TO252-3 |
4,878 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 3.9V @ 200µA | 25nC @ 10V | ±20V | 490pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 7.3A TO252-3 |
5,040 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 27nC @ 10V | ±20V | 790pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 900V 6.9A TO262-3 |
7,974 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 6.9A (Tc) | 10V | 800mOhm @ 4.1A, 10V | 3.5V @ 460µA | 42nC @ 10V | ±20V | 1100pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 900V 11A TO220-3 |
3,418 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 3.5V @ 740µA | 68nC @ 10V | ±20V | 1700pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 800V 8A TO262-3 |
8,856 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 650mOhm @ 5.1A, 10V | 3.9V @ 470µA | 60nC @ 10V | ±20V | 1100pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 600V 3.2A TO251-3 |
3,042 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 3.9V @ 135µA | 17nC @ 10V | ±20V | 400pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET P-CH 30V 50A TO-252 |
5,868 |
|
OptiMOS®-P | P-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 7mOhm @ 50A, 10V | 2V @ 250µA | 126nC @ 10V | ±20V | 6880pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-5 | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
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Infineon Technologies |
MOSFET N-CH 100V 100A TO262-3 |
8,730 |
|
OptiMOS™ 3 | N-Channel | MOSFET (Metal Oxide) | 100V | 137A (Tc) | 6V, 10V | 4.5mOhm @ 100A, 10V | 3.5V @ 150µA | 117nC @ 10V | ±20V | 8410pF @ 50V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 75V 120A TO220 |
8,226 |
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OptiMOS™ 3 | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 2.3mOhm @ 100A, 10V | 3.8V @ 273µA | 206nC @ 10V | ±20V | 14400pF @ 37.5V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 800V 4A TO-220AB |
6,606 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 1.3Ohm @ 2.5A, 10V | 3.9V @ 240µA | 31nC @ 10V | ±20V | 570pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 800V 6A TO-220AB |
6,408 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 900mOhm @ 3.8A, 10V | 3.9V @ 250µA | 41nC @ 10V | ±20V | 785pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 800V 8A TO-220AB |
5,562 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 650mOhm @ 5.1A, 10V | 3.9V @ 470µA | 60nC @ 10V | ±20V | 1100pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO-220 |
8,100 |
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Automotive, AEC-Q101, SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 8mOhm @ 80A, 10V | 4V @ 240µA | 187nC @ 10V | ±20V | 3660pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V TO-247-3 |
3,420 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 46A (Tc) | 10V | 45mOhm @ 24.9A, 10V | 4V @ 1.25mA | 93nC @ 10V | ±20V | 4.34nF @ 400V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
4,608 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 13A (Tc) | 10V | 190mOhm @ 5.7A, 10V | 4V @ 290µA | 23nC @ 10V | ±20V | 1150pF @ 400V | - | 72W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 80A TO262-3 |
3,834 |
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OptiMOS™ 3 | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 6V, 10V | 7.2mOhm @ 80A, 10V | 3.5V @ 90µA | 68nC @ 10V | ±20V | 4910pF @ 50V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 8HSOF |
5,940 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 300A (Tc) | 10V | 0.76mOhm @ 100A, 10V | 4V @ 230µA | 287nC @ 10V | ±20V | 22945pF @ 25V | - | 429W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
2,592 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
3,222 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
5,148 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 60V 29A DPAK |
6,804 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 29A (Tc) | 4.5V, 10V | 35mOhm @ 29A, 10V | 2V @ 28µA | 13nC @ 5V | ±20V | 800pF @ 30V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 80V 300A PG-HSOG-8-1 |
6,696 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 300A (Tc) | 6V, 10V | 1.4mOhm @ 100A, 10V | 3.8V @ 230µA | 187nC @ 10V | ±20V | 13178pF @ 40V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOG-8-1 | 8-PowerSMD, Gull Wing |
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Infineon Technologies |
MOSFET N-CH 80V 240A PG-HSOG-8-1 |
2,988 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 240A (Tc) | 6V, 10V | 1.9mOhm @ 100A, 10V | 3.8V @ 160µA | 130nC @ 10V | ±20V | 9264pF @ 40V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOG-8-1 | 8-PowerSMD, Gull Wing |
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Infineon Technologies |
MOSFET N-CH 80V 200A PG-HSOG-8-1 |
2,250 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 200A (Tc) | 6V, 10V | 2.3mOhm @ 100A, 10V | 3.8V @ 130µA | 110nC @ 10V | ±20V | 7670pF @ 40V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOG-8-1 | 8-PowerSMD, Gull Wing |
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Infineon Technologies |
TRENCH 40<-<100V |
7,380 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 4.5V, 10V | 11mOhm @ 100A, 10V | 2V @ 5.55mA | 281nC @ 10V | ±20V | 8500pF @ 30V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
TRENCH 40<-<100V |
7,578 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 35A (Tc) | 10V | 38mOhm @ 35A, 10V | 4V @ 1.7mA | 63nC @ 10V | ±20V | 2500pF @ 30V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
TRENCH 40<-<100V |
3,672 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 22A (Tc) | 10V | 65mOhm @ 22A, 10V | 4V @ 1.04mA | 39nC @ 10V | ±20V | 1600pF @ 30V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |