VP2206N3-G-P003
For Reference Only
| Part Number | VP2206N3-G-P003 |
| PNEDA Part # | VP2206N3-G-P003 |
| Description | MOSFET P-CH 60V 640MA TO92-3 |
| Manufacturer | Microchip Technology |
| Unit Price | Request a Quote |
| In Stock | 4,824 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 18 - Mar 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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VP2206N3-G-P003 Resources
| Brand | Microchip Technology |
| ECAD Module |
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| Mfr. Part Number | VP2206N3-G-P003 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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VP2206N3-G-P003 Specifications
| Manufacturer | Microchip Technology |
| Series | - |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 640mA (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 3.5A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 450pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 740mW (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-92-3 |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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