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IPB180N04S4L01ATMA1

IPB180N04S4L01ATMA1

For Reference Only

Part Number IPB180N04S4L01ATMA1
PNEDA Part # IPB180N04S4L01ATMA1
Description MOSFET N-CH TO263-7
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,524
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB180N04S4L01ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB180N04S4L01ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPB180N04S4L01ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesAutomotive, AEC-Q101, OptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id2.2V @ 140µA
Gate Charge (Qg) (Max) @ Vgs245nC @ 10V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds19100pF @ 25V
FET Feature-
Power Dissipation (Max)188W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-7-3
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

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