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DMJ70H600SH3

DMJ70H600SH3

For Reference Only

Part Number DMJ70H600SH3
PNEDA Part # DMJ70H600SH3
Description MOSFET BVDSS: 651V 800V TO251
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 6,822
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 6 - Apr 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMJ70H600SH3 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMJ70H600SH3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMJ70H600SH3, DMJ70H600SH3 Datasheet (Total Pages: 7, Size: 453.49 KB)
PDFDMJ70H600SH3 Datasheet Cover
DMJ70H600SH3 Datasheet Page 2 DMJ70H600SH3 Datasheet Page 3 DMJ70H600SH3 Datasheet Page 4 DMJ70H600SH3 Datasheet Page 5 DMJ70H600SH3 Datasheet Page 6 DMJ70H600SH3 Datasheet Page 7

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DMJ70H600SH3 Specifications

ManufacturerDiodes Incorporated
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)700V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18.2nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds643pF @ 25V
FET Feature-
Power Dissipation (Max)113W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251
Package / CaseTO-251-3, IPak, Short Leads

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