IPP80N06S209AKSA2
For Reference Only
| Part Number | IPP80N06S209AKSA2 |
| PNEDA Part # | IPP80N06S209AKSA2 |
| Description | MOSFET N-CH 55V 80A TO220-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 8,964 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Feb 19 - Feb 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPP80N06S209AKSA2 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPP80N06S209AKSA2 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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- Delivery date: usually 2 to 7 working days.
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IPP80N06S209AKSA2 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 9.1mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 125µA |
| Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2360pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3-1 |
| Package / Case | TO-220-3 |
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Manufacturer Infineon Technologies Series CoolMOS™ P7 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 700V Current - Continuous Drain (Id) @ 25°C 8.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 600mOhm @ 1.8A, 10V Vgs(th) (Max) @ Id 3.5V @ 90µA Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 364pF @ 400V FET Feature - Power Dissipation (Max) 43W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Manufacturer Alpha & Omega Semiconductor Inc. Series AlphaMOS FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 36A (Ta), 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.85mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 5200pF @ 15V FET Feature - Power Dissipation (Max) 4.2W (Ta), 34W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-DFN-EP (3.3x3.3) Package / Case 8-PowerWDFN |
