FCP190N65S3R0
For Reference Only
| Part Number | FCP190N65S3R0 |
| PNEDA Part # | FCP190N65S3R0 |
| Description | MOSFET N-CH 650V 190MOHM TO220 I |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 7,686 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 2 - Apr 7 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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FCP190N65S3R0 Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | FCP190N65S3R0 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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FCP190N65S3R0 Specifications
| Manufacturer | ON Semiconductor |
| Series | SuperFET® III |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 8.5A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 1.7mA |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 400V |
| FET Feature | - |
| Power Dissipation (Max) | 144W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
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Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 4.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.3Ohm @ 2.05A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1550pF @ 25V FET Feature - Power Dissipation (Max) 90W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3PF Package / Case TO-3P-3 Full Pack |
