FCP190N65S3R0
For Reference Only
Part Number | FCP190N65S3R0 |
PNEDA Part # | FCP190N65S3R0 |
Description | MOSFET N-CH 650V 190MOHM TO220 I |
Manufacturer | ON Semiconductor |
Unit Price | Request a Quote |
In Stock | 7,686 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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FCP190N65S3R0 Resources
Brand | ON Semiconductor |
ECAD Module | |
Mfr. Part Number | FCP190N65S3R0 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Datasheet |
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FCP190N65S3R0 Specifications
Manufacturer | ON Semiconductor |
Series | SuperFET® III |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 190mOhm @ 8.5A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 1.7mA |
Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 400V |
FET Feature | - |
Power Dissipation (Max) | 144W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
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