Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 485/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 600V 9.2A TO263 |
3,708 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 9.2A (Tc) | 10V | 750mOhm @ 5.5A, 10V | 4V @ 250µA | 49nC @ 10V | ±30V | 1400pF @ 25V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 11A TO251A |
8,784 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 399mOhm @ 3.8A, 10V | 4.1V @ 250µA | 11nC @ 10V | ±30V | 545pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251A | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 60V 45A TO220-3 |
5,472 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 45A (Tc) | 10V | 9.4mOhm @ 45A, 10V | 4V @ 34µA | 47nC @ 10V | ±20V | 3785pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Nexperia |
MOSFET N-CH 80V 100A D2PAK |
8,658 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Tc) | 10V | 5.1mOhm @ 25A, 10V | 4V @ 1mA | 101nC @ 10V | ±20V | 6793pF @ 40V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 80V 126A 8PQFN |
4,230 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 126A (Tc) | 6V, 10V | 4mOhm @ 44A, 10V | 4V @ 250µA | 55nC @ 10V | ±20V | 4250pF @ 40V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6), Power56 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 40V 80A |
5,058 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 1.7mOhm @ 80A, 10V | 3V @ 250µA | 110nC @ 10V | ±20V | 5750pF @ 20V | - | 214W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 60V 80A D2PAK |
8,568 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 5.6mOhm @ 80A, 10V | 4V @ 250µA | 52nC @ 10V | ±20V | 2520pF @ 30V | - | 94W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET P-CH 20V 8-SOIC |
4,374 |
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Automotive, AEC-Q101, PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 13.5A (Ta) | 1.8V, 4.5V | 8.5mOhm @ 13.5A, 4.5V | 1.5V @ 250µA | 120nC @ 4.5V | ±8V | 8237pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Microchip Technology |
MOSFET N-CH 200V 0.25A TO92-3 |
6,732 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 250mA (Tj) | 5V, 10V | 6Ohm @ 500mA, 10V | 1.6V @ 1mA | - | ±20V | 150pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET P-CH 220V 0.26A SOT89-3 |
3,472 |
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- | P-Channel | MOSFET (Metal Oxide) | 220V | 260mA (Tj) | 4.5V, 10V | 12Ohm @ 200mA, 10V | 2.4V @ 1mA | - | ±20V | 125pF @ 25V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 5A TO220SIS |
2,016 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Ta) | 10V | 1.5Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 490pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 80V 40A TO220-3 |
7,308 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 40A (Tc) | 6V, 10V | 10mOhm @ 40A, 10V | 3.5V @ 46µA | 35nC @ 10V | ±20V | 2410pF @ 40V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 5.5A TO-220SIS |
7,740 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 450V | 5.5A (Ta) | 10V | 1.35Ohm @ 2.8A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 490pF @ 25V | - | - | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Diodes Incorporated |
MOSFET BVDSS: 31V-40V POWERDI506 |
5,562 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 900V 6.3A TO-220F |
2,232 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 900V | 6.3A (Tc) | 10V | 1.9Ohm @ 3.15A, 10V | 5V @ 250µA | 45nC @ 10V | ±30V | 2080pF @ 25V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 60V 19A TO220 |
6,300 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 19A (Ta), 140A (Tc) | 6V, 10V | 3.2mOhm @ 20A, 10V | 3.2V @ 250µA | 94nC @ 10V | ±20V | 8400pF @ 30V | - | 2.1W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 80V 11A TO220 |
5,148 |
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SDMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 11A (Ta), 105A (Tc) | 7V, 10V | 7.2mOhm @ 20A, 10V | 3.7V @ 250µA | 81nC @ 10V | ±25V | 4870pF @ 40V | - | 2.1W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 7A TO220AB |
5,490 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 600mOhm @ 3A, 10V | 4V @ 250µA | 48nC @ 10V | ±30V | 820pF @ 100V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 24A DPAK |
2,448 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 24A (Tc) | 10V | 78mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | ±20V | 1710pF @ 50V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CHANNEL_100+ |
8,496 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CHANNEL_100+ |
2,664 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 100V 63A TDSON-8 |
4,806 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 9.4A (Ta), 63A (Tc) | 4.5V, 10V | 15.9mOhm @ 50A, 10V | 2.4V @ 72µA | 35nC @ 10V | ±20V | 2500pF @ 50V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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ON Semiconductor |
FET 80V 10.0 MOHM PQFN33 |
3,420 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 11A (Ta), 50A (Tc) | 4.5V, 10V | 10.9mOhm @ 16A, 10V | 3V @ 90µA | 31nC @ 10V | ±20V | 2135pF @ 40V | - | 2.3W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 30V 49A SO8FL |
8,010 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 49A (Ta), 319A (Tc) | 4.5V, 10V | 0.9mOhm @ 30A, 10V | 2.2V @ 250µA | 139nC @ 10V | ±20V | 10144pF @ 15V | - | 3.84W (Ta), 161W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Alpha & Omega Semiconductor |
MOSFET N-CH |
7,974 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 260mOhm @ 11A, 10V | 4.5V @ 250µA | 83nC @ 10V | ±30V | 3710pF @ 25V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Renesas Electronics America |
MOSFET N-CH 500V 6A TO220 |
7,992 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 6A (Ta) | 10V | 1.3Ohm @ 3A, 10V | - | - | ±30V | 600pF @ 25V | - | 27.4W (Tc) | 150°C (TJ) | Through Hole | TO-220FL | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET P-CH 30V 22A DIRECTFET |
3,042 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta), 160A (Tc) | 4.5V, 10V | 2.9mOhm @ 22A, 10V | 2.4V @ 150µA | 130nC @ 10V | ±20V | 7305pF @ 15V | - | 2.1W (Ta), 113W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 200V 21A TO-263 |
2,250 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 21A (Tc) | 10V | 130mOhm @ 13.5A, 10V | 4V @ 1mA | - | ±20V | 1900pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 650V 10.2A TO220 |
8,262 |
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FRFET®, SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 650V | 10.2A (Tc) | 10V | 380mOhm @ 5.1A, 10V | 5V @ 1mA | 43nC @ 10V | ±20V | 1680pF @ 100V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 100V 5A PPAK SO-8 |
6,210 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 5A (Ta) | 6V, 10V | 34mOhm @ 7.8A, 10V | 4V @ 250µA | 30nC @ 10V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |