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IPA100N08N3GXKSA1

IPA100N08N3GXKSA1

For Reference Only

Part Number IPA100N08N3GXKSA1
PNEDA Part # IPA100N08N3GXKSA1
Description MOSFET N-CH 80V 40A TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,308
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 19 - Mar 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPA100N08N3GXKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPA100N08N3GXKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPA100N08N3GXKSA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs10mOhm @ 40A, 10V
Vgs(th) (Max) @ Id3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2410pF @ 40V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-FP
Package / CaseTO-220-3 Full Pack

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