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BSC159N10LSFGATMA1

BSC159N10LSFGATMA1

For Reference Only

Part Number BSC159N10LSFGATMA1
PNEDA Part # BSC159N10LSFGATMA1
Description MOSFET N-CH 100V 63A TDSON-8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,806
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 30 - Apr 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC159N10LSFGATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC159N10LSFGATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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BSC159N10LSFGATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C9.4A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs15.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2.4V @ 72µA
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2500pF @ 50V
FET Feature-
Power Dissipation (Max)114W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN

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