Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 483/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Nexperia |
MOSFET N-CH 75V 75A TO220AB |
2,052 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 75A (Tc) | 10V | 5mOhm @ 25A, 10V | 4V @ 1mA | 165nC @ 10V | ±20V | 8250pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Microchip Technology |
MOSFET N-CH 400V 0.175A TO92-3 |
7,740 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 175mA (Tj) | 4.5V, 10V | 12Ohm @ 500mA, 10V | 2V @ 1mA | - | ±20V | 125pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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ON Semiconductor |
T6 40V LL LFPAK |
8,532 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 41A (Ta), 237A (Tc) | 4.5V, 10V | 1.2mOhm @ 50A, 10V | 2V @ 170µA | 93nC @ 10V | ±20V | 5600pF @ 25V | - | 3.8W (Ta), 128W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-LFPAK | 8-PowerSMD, Gull Wing |
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Infineon Technologies |
MOSFET N-CH 500V 7.1A TO-220 |
8,226 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 7.1A (Tc) | 10V | 520mOhm @ 3.8A, 10V | 3.5V @ 250µA | 17nC @ 10V | ±20V | 680pF @ 100V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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ON Semiconductor |
40V 1.2 MOHM T6 S08FL SIN |
8,496 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 41A (Ta), 237A (Tc) | 4.5V, 10V | 1.2mOhm @ 50A, 10V | 2V @ 250µA | 93nC @ 10V | ±20V | 5600pF @ 25V | - | 3.8W (Ta), 128W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET N-CH 55V 17A DPAK |
7,506 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 4V, 10V | 65mOhm @ 10A, 10V | 2V @ 250µA | 15nC @ 5V | ±16V | 480pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO263-3 |
6,066 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 3.2mOhm @ 100A, 10V | 4V @ 118µA | 165nC @ 10V | ±20V | 13000pF @ 30V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 200V D2PAK TO-263 |
2,862 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Alpha & Omega Semiconductor |
MOSFET N-CH 60V 85A DFN |
6,948 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 41A (Ta), 85A (Tc) | 4.5V, 10V | 2.4mOhm @ 20A, 10V | 2.5V @ 250µA | 115nC @ 10V | ±20V | 5578pF @ 30V | - | 7.3W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Infineon Technologies |
MOSFET N-CH 150V 33A DPAK |
3,456 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 33A (Tc) | 10V | 42mOhm @ 21A, 10V | 5V @ 100µA | 26nC @ 10V | ±20V | 1750pF @ 50V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N CH 30V 13A 8-SO |
7,362 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V | 11mOhm @ 7A, 4.5V | 3V @ 250µA | 31nC @ 5V | ±12V | - | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 55V 51A TO220AB |
5,868 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 51A (Tc) | 10V | 13.9mOhm @ 31A, 10V | 4V @ 250µA | 43nC @ 10V | ±20V | 1420pF @ 25V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 30V 49A SO8FL |
5,886 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 49A (Ta), 319A (Tc) | 4.5V, 10V | 0.9mOhm @ 30A, 10V | 2.2V @ 250µA | 139nC @ 10V | ±20V | 10144pF @ 15V | - | 3.84W (Ta), 161W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET P-CH 200V 2A TO220FP |
2,100 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 2A (Tc) | 10V | 3Ohm @ 1.2A, 10V | 4V @ 250µA | 13nC @ 10V | ±20V | 180pF @ 25V | - | 27W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Infineon Technologies |
MOSFET N-CH 40V 100A IPAK |
6,552 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 3.1mOhm @ 76A, 10V | 3.9V @ 100µA | 99nC @ 10V | ±20V | 3171pF @ 25V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 400V 6A D2PAK |
8,550 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 400V | 6A (Tc) | 10V | 1Ohm @ 3A, 10V | 4V @ 250µA | 20nC @ 10V | ±30V | 625pF @ 25V | - | 73W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
CONSUMER |
3,366 |
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CoolMOS™ | - | - | 600V | - | - | - | - | - | - | - | - | - | - | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 1000V 4A TO220 |
4,356 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 4A (Tc) | 10V | 4.2Ohm @ 2.5A, 10V | 4.5V @ 250µA | 23nC @ 10V | ±30V | 1150pF @ 25V | - | 195W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 500V 10A TO220F |
7,182 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 4.2V @ 250µA | 35nC @ 10V | ±30V | 1240pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 2.5A TO-220SIS |
2,592 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 2.5A (Ta) | 10V | 2.8Ohm @ 1.3A, 10V | 4.4V @ 1mA | 9nC @ 10V | ±30V | 380pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 200V 3.3A D2PAK |
6,084 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 3.3A (Tc) | 10V | 1.5Ohm @ 2A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 3W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 250V 2.7A D2PAK |
6,228 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 2.7A (Tc) | 10V | 2Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 3.1W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 100V 14A D2PAK |
7,056 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 160mOhm @ 8.4A, 10V | 4V @ 250µA | 26nC @ 10V | ±20V | 670pF @ 25V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 140A D2PAK |
7,542 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 140A (Tc) | 4.5V, 10V | 5.5mOhm @ 71A, 10V | 1V @ 250µA | 76nC @ 4.5V | ±16V | 3720pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 7A TO-220AB |
4,608 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 4V @ 250µA | 40nC @ 10V | ±30V | 680pF @ 100V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CHANNEL_55/60V |
3,762 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 500V 11.5A TO-220 |
8,748 |
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ON Semiconductor |
MOSFET P-CHANNEL 100V 31A DPAK |
3,726 |
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Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 100V | 31A (Ta) | 10V | 75mOhm @ 14A, 10V | 3.5V @ 1mA | 55nC @ 10V | ±20V | 2850pF @ 20V | - | 84W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CHANNEL 80V 100A 8DFN |
4,050 |
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AlphaSGT™ | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Tc) | 6V, 10V | 2.6mOhm @ 20A, 10V | 3.2V @ 250µA | 100nC @ 10V | ±20V | 4940pF @ 40V | - | 215W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (5x6) | 8-PowerSMD, Flat Leads |
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Nexperia |
MOSFET N-CH 75V 120A D2PAK |
5,742 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 4.5V, 10V | 4mOhm @ 25A, 10V | 2.8V @ 1mA | 234nC @ 10V | ±16V | 15450pF @ 25V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |