Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

AUIRFR4620TRL

AUIRFR4620TRL

For Reference Only

Part Number AUIRFR4620TRL
PNEDA Part # AUIRFR4620TRL
Description MOSFET N-CH 200V 24A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,448
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

AUIRFR4620TRL Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberAUIRFR4620TRL
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • AUIRFR4620TRL Datasheet
  • where to find AUIRFR4620TRL
  • Infineon Technologies

  • Infineon Technologies AUIRFR4620TRL
  • AUIRFR4620TRL PDF Datasheet
  • AUIRFR4620TRL Stock

  • AUIRFR4620TRL Pinout
  • Datasheet AUIRFR4620TRL
  • AUIRFR4620TRL Supplier

  • Infineon Technologies Distributor
  • AUIRFR4620TRL Price
  • AUIRFR4620TRL Distributor

AUIRFR4620TRL Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs78mOhm @ 15A, 10V
Vgs(th) (Max) @ Id5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1710pF @ 50V
FET Feature-
Power Dissipation (Max)144W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-PAK (TO-252AA)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

NP82N10PUF-E1-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

SCT3105KLHRC11

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V

Rds On (Max) @ Id, Vgs

137mOhm @ 7.6A, 18V

Vgs(th) (Max) @ Id

5.6V @ 3.81mA

Gate Charge (Qg) (Max) @ Vgs

51nC @ 18V

Vgs (Max)

+22V, -4V

Input Capacitance (Ciss) (Max) @ Vds

574pF @ 800V

FET Feature

-

Power Dissipation (Max)

134W

Operating Temperature

175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247N

Package / Case

TO-247-3

FDMS1D5N03

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

218A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.15mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

63nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

9690pF @ 15V

FET Feature

-

Power Dissipation (Max)

83W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PQFN (5x6)

Package / Case

8-PowerTDFN

STP60NE06-16

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

16mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

160nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6200pF @ 25V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

NP60N04MUK-S18-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.3mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

63nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3680pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta), 105W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3 Full Pack

Recently Sold

0CNL200.V

0CNL200.V

Littelfuse

FUSE STRIP 200A 32VAC/VDC BOLT

SMAJ40CA

SMAJ40CA

Bourns

TVS DIODE 40V 64.5V SMA

LM833DT

LM833DT

STMicroelectronics

IC AUDIO 2 CIRCUIT 8SO

24LC01BT-I/OT

24LC01BT-I/OT

Microchip Technology

IC EEPROM 1K I2C 400KHZ SOT23-5

NIS5135MN1TXG

NIS5135MN1TXG

ON Semiconductor

IC ELECTRONIC FUSE 10DFN

KSZ9031RNXIC

KSZ9031RNXIC

Microchip Technology

IC TRANSCEIVER FULL 4/4 48QFN

LFXP2-17E-6FTN256I

LFXP2-17E-6FTN256I

Lattice Semiconductor Corporation

IC FPGA 201 I/O 256FTBGA

BR24T128-W

BR24T128-W

Rohm Semiconductor

IC EEPROM 128K I2C 8-DIP-T

XC878CM16FFI5VACFXUMA1

XC878CM16FFI5VACFXUMA1

Infineon Technologies

IC MCU 8BIT 64KB FLASH 64LQFP

PIC32MX795F512L-80I/PT

PIC32MX795F512L-80I/PT

Microchip Technology

IC MCU 32BIT 512KB FLASH 100TQFP

ALS70A243DF063

ALS70A243DF063

KEMET

CAP ALUM 24000UF 20% 63V SCREW

EPM2210F256I5N

EPM2210F256I5N

Intel

IC CPLD 1700MC 7NS 256FBGA