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SIHFS9N60A-GE3

SIHFS9N60A-GE3

For Reference Only

Part Number SIHFS9N60A-GE3
PNEDA Part # SIHFS9N60A-GE3
Description MOSFET N-CH 600V 9.2A TO263
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,708
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 8 - Apr 13 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHFS9N60A-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHFS9N60A-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHFS9N60A-GE3, SIHFS9N60A-GE3 Datasheet (Total Pages: 10, Size: 225 KB)
PDFIRFS9N60ATRR Datasheet Cover
IRFS9N60ATRR Datasheet Page 2 IRFS9N60ATRR Datasheet Page 3 IRFS9N60ATRR Datasheet Page 4 IRFS9N60ATRR Datasheet Page 5 IRFS9N60ATRR Datasheet Page 6 IRFS9N60ATRR Datasheet Page 7 IRFS9N60ATRR Datasheet Page 8 IRFS9N60ATRR Datasheet Page 9 IRFS9N60ATRR Datasheet Page 10

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SIHFS9N60A-GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs750mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs49nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1400pF @ 25V
FET Feature-
Power Dissipation (Max)170W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (D²Pak)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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