Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 437/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
T6 60V S08FL SINGLE |
3,528 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 11A (Ta), 36A (Tc) | 4.5V, 10V | 15mOhm @ 10A, 10V | 2V @ 25µA | 9.7nC @ 10V | ±20V | 620pF @ 25V | - | 3.5W (Ta), 37W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET N-CH TO252-3 |
5,256 |
|
CoolMOS™ C6 | N-Channel | MOSFET (Metal Oxide) | 650V | 3.2A (Tc) | 10V | 1.4Ohm @ 1A, 10V | 3.5V @ 100µA | 10.5nC @ 10V | ±20V | 225pF @ 100V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 30V 3.7A 6TSOP |
3,276 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 3.7A (Ta) | 4.5V, 10V | 60mOhm @ 3.7A, 10V | 3V @ 250µA | 32nC @ 10V | ±20V | 750pF @ 15V | - | 630mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 |
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ON Semiconductor |
MOSFET N-CH 30V 3.5A 6TSOP |
5,922 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 3.5A (Ta) | 4.5V, 10V | 25mOhm @ 7A, 10V | 3V @ 250µA | 12nC @ 10V | ±20V | 560pF @ 24V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 55V 27A DPAK |
7,398 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 27A (Tc) | 10V | 45mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 700pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 30V 7.4A 8DSO |
2,286 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 7.4A (Ta) | 10V | 20mOhm @ 9.1A, 10V | 1.5V @ 100µA | 54nC @ 10V | ±25V | 2330pF @ 25V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET N-CH 40V 20A 8DFN |
4,428 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 20A (Ta), 85A (Tc) | 4.5V, 10V | 3.4mOhm @ 20A, 10V | 2.4V @ 250µA | 41nC @ 10V | ±20V | 2805pF @ 20V | - | 2.3W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Infineon Technologies |
MOSFET P-CH 30V 12A 8DSO |
5,274 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 6V, 10V | 8mOhm @ 14.8A, 10V | 3.1V @ 150µA | 81nC @ 10V | ±25V | 6750pF @ 15V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 12A 8DSO |
4,932 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 6V, 10V | 8mOhm @ 14.8A, 10V | 3.1V @ 150µA | 81nC @ 10V | ±25V | 6750pF @ 15V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 3A TO252 |
4,680 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 3A (Tc) | 10V | 1.4Ohm @ 1A, 10V | 5V @ 250µA | 15nC @ 10V | ±30V | 648pF @ 100V | - | 89W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 30V 43.4A TO220AB |
5,346 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 43.4A (Tc) | 4.5V, 10V | 17mOhm @ 25A, 10V | 2V @ 250µA | 18.5nC @ 10V | ±20V | 690pF @ 25V | - | 57.6W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
ON Semiconductor |
MOSFET N-CH 60V 17A 71A 5DFN |
7,524 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Ta), 71A (Tc) | 4.5V, 10V | 6.1mOhm @ 35A, 10V | 2V @ 53µA | 20nC @ 10V | ±20V | 1400pF @ 25V | - | 61W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CHANNEL 40V 85A 8WDFN |
8,424 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 85A (Tc) | 4.5V, 10V | 4mOhm @ 20A, 10V | 2.2V @ 250µA | 18nC @ 10V | ±20V | 1600pF @ 25V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Vishay Siliconix |
MOSFET N-CH 40V 60A POWERPAKSO-8 |
4,662 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 60A (Tc) | 4.5V, 10V | 5mOhm @ 14A, 10V | 2.5V @ 250µA | 65nC @ 10V | ±20V | 4220pF @ 20V | - | 46W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
TRENCH <= 40V |
7,848 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
CONSUMER |
2,772 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 13A 8SOP |
8,892 |
|
U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 11.6mOhm @ 6.5A, 10V | 2.3V @ 200µA | 20nC @ 10V | ±20V | 1350pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET N-CH 20V 0.5A SC89-3L |
7,686 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 500mA (Ta) | 1.8V, 4.5V | 550mOhm @ 500mA, 4.5V | 1V @ 250µA | 1nC @ 4.5V | ±8V | 45pF @ 10V | - | 280mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-3 | SC-89, SOT-490 |
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Infineon Technologies |
MOSFET P-CH 55V 18A DPAK |
5,958 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 18A (Tc) | 10V | 110mOhm @ 9.6A, 10V | 4V @ 250µA | 32nC @ 10V | ±20V | 650pF @ 25V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 60VSOT223 |
6,156 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 3.8A (Ta) | 4.5V, 10V | 80mOhm @ 4.8A, 10V | 1V @ 250µA | 5.8nC @ 10V | ±20V | 459pF @ 40V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 30V 27A U8FL |
5,040 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 40V SO8FL |
4,842 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | - | 4.5V, 10V | 4.5mOhm @ 35A, 10V | 2V @ 250µA | 23nC @ 10V | ±20V | 1300pF @ 20V | - | 3.6W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Microchip Technology |
MOSFET N-CH 500V 30MA TO92-3 |
8,820 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 30mA (Tj) | 0V | 1000Ohm @ 500µA, 0V | - | - | ±20V | 10pF @ 25V | Depletion Mode | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 500V 30MA TO92-3 |
6,354 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 30mA (Tj) | 0V | 1000Ohm @ 500µA, 0V | - | - | ±20V | 10pF @ 25V | Depletion Mode | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 500V 30MA TO92-3 |
2,862 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 30mA (Tj) | 0V | 1000Ohm @ 500µA, 0V | - | - | ±20V | 10pF @ 25V | Depletion Mode | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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ON Semiconductor |
40V 7.3 MOHM T6 S08FL SIN |
6,768 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 15A (Ta), 49A (Tc) | 10V | 8.1mOhm @ 15A, 10V | 3.5V @ 250µA | 10nC @ 10V | ±20V | 625pF @ 25V | - | 3.5W (Ta), 37W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 50A 3X3DFN |
2,862 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 34A (Ta), 50A (Tc) | 4.5V, 10V | 2.8mOhm @ 20A, 10V | 2.3V @ 250µA | 60nC @ 10V | ±20V | 3120pF @ 15V | - | 6.2W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3.3x3.3) | 8-PowerWDFN |
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Rohm Semiconductor |
MOSFET N-CH 100V 5A CPT3 |
5,508 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 5A (Ta) | 4V, 10V | 190mOhm @ 5A, 10V | 2.5V @ 1mA | 14nC @ 10V | ±20V | 530pF @ 25V | - | 15W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 80V 9.5A PWRDI5060-8 |
3,348 |
|
- | N-Channel | MOSFET (Metal Oxide) | 80V | 10A (Ta), 72A (Tc) | 4.5V, 10V | 17mOhm @ 12A, 10V | 3V @ 250µA | 34nC @ 10V | ±20V | 1949pF @ 40V | - | 2.6W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N-CH 80V 9A PWRDI5060-8 |
5,328 |
|
- | N-Channel | MOSFET (Metal Oxide) | 80V | 9A (Ta), 65A (Tc) | 4.5V, 10V | 17mOhm @ 12A, 10V | 3V @ 250µA | 34nC @ 10V | ±20V | 1949pF @ 40V | - | 2.1W (Ta), 113W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |