NVMFS5C677NLWFT1G
For Reference Only
| Part Number | NVMFS5C677NLWFT1G |
| PNEDA Part # | NVMFS5C677NLWFT1G |
| Description | T6 60V S08FL SINGLE |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 3,528 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NVMFS5C677NLWFT1G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NVMFS5C677NLWFT1G |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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NVMFS5C677NLWFT1G Specifications
| Manufacturer | ON Semiconductor |
| Series | Automotive, AEC-Q101 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 36A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs | 9.7nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 620pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 37W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Package / Case | 8-PowerTDFN, 5 Leads |
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Manufacturer Global Power Technologies Group Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 4.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.1Ohm @ 2.1A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 658pF @ 25V FET Feature - Power Dissipation (Max) 98.4W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Manufacturer Rohm Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 18A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.4mOhm @ 18A, 10V Vgs(th) (Max) @ Id 2.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7200pF @ 15V FET Feature - Power Dissipation (Max) 1.4W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP Package / Case 8-SOIC (0.154", 3.90mm Width) |
