Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 439/999
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Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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ON Semiconductor |
POWER TRENCH MOSFET |
7,128 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 30A (Tc) | 10V | 22mOhm @ 30A, 10V | 4V @ 250µA | 21nC @ 10V | ±20V | 866pF @ 40V | - | 50W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 900V 1.7A IPAK |
6,282 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 900V | 1.7A (Tc) | 10V | 7.2Ohm @ 850mA, 10V | 5V @ 250µA | 15nC @ 10V | ±30V | 500pF @ 25V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 2A PW-MOLD |
5,472 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Ta) | 10V | 4.3Ohm @ 1A, 10V | 4.4V @ 1mA | 7nC @ 10V | ±30V | 280pF @ 25V | - | 60W (Tc) | 150°C (TJ) | Surface Mount | PW-MOLD | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
4,986 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 66A (Ta), 45A (Tc) | 4.5V, 10V | 6.3mOhm @ 22.5A, 10V | 2.5V @ 500µA | 55nC @ 10V | ±20V | 4300pF @ 50V | - | 2.5W (Ta), 54W (Tc) | 150°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET N-CH 75V 23A POWERDI3333 |
2,052 |
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- | N-Channel | MOSFET (Metal Oxide) | 75V | 23A (Tc) | 4.5V, 10V | 22mOhm @ 7.2A, 10V | 3V @ 250µA | 56.5nC @ 10V | ±20V | 2737pF @ 35V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET N-CH 75V 23A POWERDI3333 |
2,124 |
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- | N-Channel | MOSFET (Metal Oxide) | 75V | 23A (Tc) | 4.5V, 10V | 22mOhm @ 7.2A, 10V | 3V @ 250µA | 56.5nC @ 10V | ±20V | 2737pF @ 35V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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ON Semiconductor |
MOSFET N-CH 30V 13A SO8FL |
8,694 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta), 93A (Tc) | 4.5V, 10V | 3.2mOhm @ 30A, 10V | 2V @ 250µA | 49.4nC @ 10V | ±20V | 4850pF @ 15V | - | 930mW (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Alpha & Omega Semiconductor |
MOSFET N-CH 300V 11.5A TO220F |
6,750 |
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- | N-Channel | MOSFET (Metal Oxide) | 300V | 11.5A (Tc) | 10V | 420mOhm @ 6A, 10V | 4.5V @ 250µA | 16nC @ 10V | ±30V | 790pF @ 25V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET P-CH 60V 5A TO263 |
8,532 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 5A (Ta), 31.5A (Tc) | 4.5V, 10V | 38mOhm @ 20A, 10V | 2.4V @ 250µA | 52nC @ 10V | ±20V | 2953pF @ 30V | - | 2.1W (Ta), 83.3W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
MOSFET P-CH 40V 34A TO220FL |
8,244 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 34A (Tc) | 4.5V, 10V | 16mOhm @ 20A, 10V | 2.5V @ 250µA | 55nC @ 10V | ±20V | 2550pF @ 20V | - | 33W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220FL | TO-220-3 Full Pack |
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Sanken |
MOSFET N-CH 30V 40A TO-263 |
5,742 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 6.5mOhm @ 39.5A, 10V | 2.5V @ 350µA | 24.6nC @ 10V | ±20V | 1480pF @ 15V | - | 64W (Tc) | 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET N-CHA 40V 17.6A DPAK |
3,096 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 17.6A (Ta), 76A (Tc) | 10V | 6mOhm @ 20A, 10V | 4V @ 250µA | 41.9nC @ 10V | ±20V | 2082pF @ 25V | - | 3.1W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CHANNEL 40V 45A TO252 |
5,508 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 45A (Tc) | 4.5V, 10V | 11mOhm @ 9.8A, 10V | 2.5V @ 250µA | 91nC @ 10V | ±25V | 4234pF @ 20V | - | 3.3W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 60V 87A LFPAK |
7,758 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 87A (Tc) | 10V | 8.7mOhm @ 20A, 10V | 4V @ 1mA | 46nC @ 10V | ±20V | 3159pF @ 25V | - | 147W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH TO252-3 |
3,436 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 8.3mOhm @ 40A, 10V | 2.2V @ 13µA | 20nC @ 10V | ±16V | 1520pF @ 15V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 600V SGL IPAK |
4,716 |
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UniFET-II™ | N-Channel | MOSFET (Metal Oxide) | 600V | 5.5A (Tc) | 10V | 1.25Ohm @ 2.75A, 10V | 5V @ 250µA | 17nC @ 10V | ±25V | 730pF @ 25V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 30V 90A TO252-3 |
3,562 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 4mOhm @ 30A, 10V | 2.2V @ 250µA | 38nC @ 10V | ±20V | 3900pF @ 15V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 25V 89A DPAK |
2,088 |
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ON Semiconductor |
MOSFET N-CH 800V 1.6A IPAK |
7,434 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 800V | 1.6A (Tc) | 10V | 4.3Ohm @ 800mA, 10V | 4.5V @ 160µA | 8.8nC @ 10V | ±20V | 355pF @ 100V | - | 27.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Diodes Incorporated |
MOSFET BVDSS: 61V-100V TO252 T&R |
8,802 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | 51.7A (Tc) | 4.5V, 10V | 22mOhm @ 20A, 10V | 3V @ 250µA | 21nC @ 10V | ±20V | 1477pF @ 50V | - | 3.1W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET P-CH 30V 16A 8SOIC |
2,808 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 8.5mOhm @ 16A, 10V | 2.3V @ 250µA | 70nC @ 10V | ±25V | 2830pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Renesas Electronics America |
MOSFET P-CH 30V 21A 8HWSON |
4,176 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 21A (Tc) | 4.5V, 10V | 11mOhm @ 21A, 10V | - | 47nC @ 10V | ±20V | 1760pF @ 10V | - | 1.5W (Ta) | 150°C (TJ) | Surface Mount | 8-HWSON (3.3x3.3) | 8-PowerWDFN |
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Nexperia |
MOSFET N-CH 55V 54A D2PAK |
2,484 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 54A (Tc) | 10V | 20mOhm @ 25A, 10V | 4V @ 1mA | - | ±20V | 1592pF @ 25V | - | 118W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 80V 5DFN |
8,874 |
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Diodes Incorporated |
MOSFET BVDSS: 41V-60V POWERDI333 |
8,604 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 15A (Ta), 80A (Tc) | 4.5V, 10V | 6mOhm @ 20A, 10V | 2V @ 250µA | 41.3nC @ 10V | ±20V | 2090pF @ 30V | - | 2.2W (Ta), 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET BVDSS: 41V-60V POWERDI333 |
6,138 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 15A (Ta), 80A (Tc) | 4.5V, 10V | 6mOhm @ 20A, 10V | 2V @ 250µA | 41.3nC @ 10V | ±20V | 2090pF @ 30V | - | 2.2W (Ta), 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET BVDSS: 25V 30V X4-DSN3415 |
3,474 |
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Microchip Technology |
MOSFET N-CH 60V 310MA TO92-3 |
7,542 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 310mA (Tj) | 5V, 10V | 5Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±30V | 60pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET N-CH 60V 310MA TO92-3 |
5,364 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 310mA (Tj) | 5V, 10V | 5Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±30V | 60pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Microchip Technology |
MOSFET N-CH 60V 310MA TO92-3 |
2,322 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 310mA (Tj) | 5V, 10V | 5Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±30V | 60pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |