Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BSO080P03NS3EGXUMA1

BSO080P03NS3EGXUMA1

For Reference Only

Part Number BSO080P03NS3EGXUMA1
PNEDA Part # BSO080P03NS3EGXUMA1
Description MOSFET P-CH 30V 12A 8DSO
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,932
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 16 - Apr 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSO080P03NS3EGXUMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSO080P03NS3EGXUMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BSO080P03NS3EGXUMA1 Datasheet
  • where to find BSO080P03NS3EGXUMA1
  • Infineon Technologies

  • Infineon Technologies BSO080P03NS3EGXUMA1
  • BSO080P03NS3EGXUMA1 PDF Datasheet
  • BSO080P03NS3EGXUMA1 Stock

  • BSO080P03NS3EGXUMA1 Pinout
  • Datasheet BSO080P03NS3EGXUMA1
  • BSO080P03NS3EGXUMA1 Supplier

  • Infineon Technologies Distributor
  • BSO080P03NS3EGXUMA1 Price
  • BSO080P03NS3EGXUMA1 Distributor

BSO080P03NS3EGXUMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs8mOhm @ 14.8A, 10V
Vgs(th) (Max) @ Id3.1V @ 150µA
Gate Charge (Qg) (Max) @ Vgs81nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds6750pF @ 15V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-DSO-8
Package / Case8-SOIC (0.154", 3.90mm Width)

The Products You May Be Interested In

IRFP450A

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

400mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

64nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2038pF @ 25V

FET Feature

-

Power Dissipation (Max)

190W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

STW18NK60Z

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

360mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

170nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3540pF @ 25V

FET Feature

-

Power Dissipation (Max)

230W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

IPP029N06NAKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

24A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

2.9mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

2.8V @ 75µA

Gate Charge (Qg) (Max) @ Vgs

56nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4100pF @ 30V

FET Feature

-

Power Dissipation (Max)

3W (Ta), 136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

IXTH20N65X

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

210mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1390pF @ 25V

FET Feature

-

Power Dissipation (Max)

320W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3

IRF6617TR1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

14A (Ta), 55A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8.1mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.35V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta), 42W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ ST

Package / Case

DirectFET™ Isometric ST

Recently Sold

RJH60D5BDPQ-E0#T2

RJH60D5BDPQ-E0#T2

Renesas Electronics America

IGBT 600V 75A 200W TO-247

MF-USMF075-2

MF-USMF075-2

Bourns

PTC RESET FUSE 6V 750MA 1210

MMBD7000-7-F

MMBD7000-7-F

Diodes Incorporated

DIODE ARRAY GP 75V 300MA SOT23-3

ADP2107ACPZ-1.2-R7

ADP2107ACPZ-1.2-R7

Analog Devices

IC REG BUCK 1.2V 2A 16LFCSP

S25FL032P0XMFI001

S25FL032P0XMFI001

Cypress Semiconductor

IC FLASH 32M SPI 104MHZ 16SOIC

LH1511BAB

LH1511BAB

Vishay Semiconductor Opto Division

SSR RELAY SPST-NC 200MA 0-200V

MAX3232ESE+T

MAX3232ESE+T

Maxim Integrated

IC TRANSCEIVER FULL 2/2 16SO

MMBZ5254B

MMBZ5254B

ON Semiconductor

DIODE ZENER 27V 350MW SOT23-3

SISS27DN-T1-GE3

SISS27DN-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 50A PPAK 1212-8S

ICM7555ISA+

ICM7555ISA+

Maxim Integrated

IC OSC SGL TIMER 500KHZ 8-SOIC

LTC4417IUF#TRPBF

LTC4417IUF#TRPBF

Linear Technology/Analog Devices

IC OR CTRLR SRC SELECT 24QFN

3386X-1-503

3386X-1-503

Bourns

TRIMMER 50K OHM 0.5W PC PIN SIDE