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IPD65R1K4C6ATMA1

IPD65R1K4C6ATMA1

For Reference Only

Part Number IPD65R1K4C6ATMA1
PNEDA Part # IPD65R1K4C6ATMA1
Description MOSFET N-CH TO252-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,256
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD65R1K4C6ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD65R1K4C6ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPD65R1K4C6ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ C6
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs10.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds225pF @ 100V
FET Feature-
Power Dissipation (Max)28W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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