Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 438/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Diodes Incorporated |
MOSFET BVDSS: 41V-60V U-DFN2020- |
5,472 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Ta) | 4.5V, 10V | 15mOhm @ 8.5A, 10V | 2.3V @ 250µA | 15nC @ 10V | ±20V | 1081pF @ 30V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 | 6-UDFN Exposed Pad |
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Renesas Electronics America |
MOSFET N-CH 400V 3A TO92 |
5,364 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 3A (Ta) | 10V | 2.9Ohm @ 1.5A, 10V | - | 6nC @ 100V | ±30V | 165pF @ 25V | - | 2.54W (Tc) | 150°C (TJ) | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body (Formed Leads) |
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Diodes Incorporated |
MOSFET BVDSS: 61V-100V TO252 |
2,916 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 500V IPAK3 |
3,798 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 8TSON |
2,898 |
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CoolMOS™ C6 | N-Channel | MOSFET (Metal Oxide) | 600V | 3A (Tc) | 10V | 1.5Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | ±20V | 200pF @ 100V | - | 26.6W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | Thin-PAK (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CHANNEL 60V 47A 8TDSON |
7,650 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 47A (Tc) | 4.5V, 10V | 9.4mOhm @ 24A, 10V | 2.3V @ 14µA | 9.4nC @ 4.5V | ±20V | 1300pF @ 30V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFETN-CH 30VPOWERDI3333-8 |
4,284 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta), 45A (Tc) | 4.5V, 10V | 5.5mOhm @ 20A, 10V | 2.5V @ 250µA | 42nC @ 10V | ±20V | 2000pF @ 15V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO252-3 |
3,330 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 5.5mOhm @ 50A, 10V | 2.2V @ 20µA | 31nC @ 10V | ±16V | 2330pF @ 25V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO252-3 |
6,120 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 5mOhm @ 30A, 10V | 2.2V @ 250µA | 31nC @ 10V | ±20V | 3200pF @ 15V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO252-3 |
3,510 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 5mOhm @ 30A, 10V | 2.2V @ 250µA | 31nC @ 10V | ±20V | 3200pF @ 15V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N CH 80V 10.5A TO252 |
6,210 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 10.5A (Ta), 46A (Tc) | 6V, 10V | 8.5mOhm @ 20A, 10V | 3.4V @ 250µA | 38nC @ 10V | ±25V | 1871pF @ 40V | - | 2.5W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 48A U8FL |
3,942 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 40V DFN5 |
3,600 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 87A (Tc) | 4.5V, 10V | 3.7mOhm @ 20A, 10V | 2V @ 250µA | 18nC @ 10V | ±20V | 1600pF @ 25V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET N-CH 30V 160A DPAK |
6,426 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 700V 10.1A IPAK |
2,592 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 10.1A (Tc) | 10V | 650mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23nC @ 10V | ±20V | 440pF @ 100V | - | 86W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Rohm Semiconductor |
MOSFET N-CH 30V 30A 8-HSOP |
6,624 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | 2.5V @ 1mA | 39.8nC @ 10V | ±20V | 2500pF @ 15V | - | 3W (Ta), 33W (Tc) | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 23A 8TSON-ADV |
3,204 |
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U-MOSVIII | N-Channel | MOSFET (Metal Oxide) | 30V | 23A (Ta) | 4.5V, 10V | 4.2mOhm @ 11.5A, 10V | 2.3V @ 200µA | 24nC @ 10V | ±20V | 1370pF @ 15V | - | 700mW (Ta), 22W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 22A TDSON-8 |
3,544 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta), 88A (Tc) | 4.5V, 10V | 3mOhm @ 30A, 10V | 2V @ 250µA | 20nC @ 10V | ±20V | 1300pF @ 15V | - | 2.5W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 50A TO252-3 |
8,082 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 7.8mOhm @ 50A, 10V | 2.2V @ 35µA | 64nC @ 10V | ±16V | 4780pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 1000V 2.5A TO252 |
6,660 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 2.5A (Tc) | 10V | 6Ohm @ 1.25A, 10V | 5.5V @ 250µA | 19nC @ 10V | ±30V | 664pF @ 25V | - | 99W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 80V 8WDFN |
6,156 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
CONSUMER |
5,328 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 360mOhm @ 2.7A, 10V | 4V @ 140µA | 13nC @ 10V | ±20V | 555pF @ 400V | - | 41W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 40V 19A 8DFN |
3,384 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 19A (Ta), 40A (Tc) | 4.5V, 10V | 5.1mOhm @ 20A, 10V | 2.4V @ 250µA | 35nC @ 10V | ±20V | 2200pF @ 20V | - | 3.1W (Ta), 36.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
2,880 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4.5V, 10V | 13.5mOhm @ 36A, 10V | 3V @ 250µA | 35nC @ 5V | ±16V | 1570pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Sanken |
MOSFET N-CH 40V 48A TO-252 |
4,860 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 48A (Tc) | 4.5V, 10V | 4mOhm @ 51A, 10V | 2.5V @ 1mA | 63.2nC @ 10V | ±20V | 3910pF @ 25V | - | 61W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Sanken |
MOSFET N-CH 60V 48A TO-252 |
6,606 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 48A (Tc) | 4.5V, 10V | 6.5mOhm @ 34A, 10V | 2.5V @ 1mA | 53.6nC @ 10V | ±20V | 3810pF @ 25V | - | 61W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 30V 75A DPAK |
6,318 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 75A (Tc) | 5V, 10V | 10mOhm @ 25A, 10V | 2.5V @ 1mA | 13.2nC @ 5V | ±20V | 1220pF @ 25V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 30V 60A POWERDI5060 |
5,094 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 7.5mOhm @ 10A, 10V | 2.1V @ 250µA | 139nC @ 10V | ±20V | 6807pF @ 15V | - | 2.6W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 60V 13A 50A 8WDFN |
8,712 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 13A (Ta), 50A (Tc) | 4.5V, 10V | 9.8mOhm @ 25A, 10V | 2V @ 250µA | 9.5nC @ 10V | ±20V | 880pF @ 25V | - | 3.1W (Ta), 46W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Nexperia |
MOSFET N-CH 100V 49A LFPAK |
4,464 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 49A (Tc) | 10V | 22mOhm @ 15A, 10V | 4V @ 1mA | 47nC @ 10V | ±20V | 2920pF @ 25V | - | 147W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |