Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
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Transistors - Bipolar (BJT) - Single (13,715)
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Transistors - FETs, MOSFETs - Arrays (3,829)
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Transistors - IGBTs - Modules (2,367)
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Transistors - Special Purpose (162)

Records 64,903

Page 833/2164

Part Number	Description	In Stock
SQJ990EP-T1_GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 100V POWERPAK SO8 Manufacturer: Vishay Siliconix Series: Automotive, AEC-Q101, TrenchFET® FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 6A, 10V, 19mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V, 650pF @ 25V Power - Max: 48W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric	In Stock5,292
SQJ992EP-T1_GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 15A POWERPAKSO8 Manufacturer: Vishay Siliconix Series: Automotive, AEC-Q101, TrenchFET® FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 56.2mOhm @ 3.7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V Power - Max: 34W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	In Stock3,924
SQJB00EP-T1_GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 60V POWERPAK SO8 Manufacturer: Vishay Siliconix Series: Automotive, AEC-Q101, TrenchFET® FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Power - Max: 48W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	In Stock7,038
SQJB40EP-T1_GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 40V POWERPAK SO8 Manufacturer: Vishay Siliconix Series: Automotive, AEC-Q101, TrenchFET® FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Power - Max: 34W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	In Stock4,230
SQJB42EP-T1_GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 40V POWERPAK SO8 Manufacturer: Vishay Siliconix Series: Automotive, AEC-Q101, TrenchFET® FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Power - Max: 48W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	In Stock8,748
SQJB60EP-T1_GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 60V POWERPAK SO8 Manufacturer: Vishay Siliconix Series: Automotive, AEC-Q101, TrenchFET® FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Power - Max: 48W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	In Stock5,940
SQJB68EP-T1_GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 100V POWERPAK SO8 Manufacturer: Vishay Siliconix Series: Automotive, AEC-Q101, TrenchFET® FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Power - Max: 27W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	In Stock6,210
SQJB70EP-T1_GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 100V POWERPAK SO8 Manufacturer: Vishay Siliconix Series: Automotive, AEC-Q101, TrenchFET® FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V Power - Max: 27W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	In Stock7,542
SQJB80EP-T1_GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 80V POWERPAK SO8 Manufacturer: Vishay Siliconix Series: Automotive, AEC-Q101, TrenchFET® FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Power - Max: 48W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	In Stock29,568
SQJB90EP-T1_GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 80V POWERPAK SO8 Manufacturer: Vishay Siliconix Series: Automotive, AEC-Q101, TrenchFET® FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 21.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Power - Max: 48W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	In Stock5,238
SQJQ900E-T1_GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 40V POWERPAK8X8 Manufacturer: Vishay Siliconix Series: Automotive, AEC-Q101, TrenchFET® FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 20V Power - Max: 75W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Dual Supplier Device Package: PowerPAK® 8 x 8 Dual	In Stock4,986
SQJQ904E-T1_GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 40V POWERPAK8X8 Manufacturer: Vishay Siliconix Series: Automotive, AEC-Q101, TrenchFET® FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 20V Power - Max: 75W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Dual Supplier Device Package: PowerPAK® 8 x 8 Dual	In Stock7,578
SQJQ906EL-T1_GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 40V POWERPAK8X8 Manufacturer: Vishay Siliconix Series: Automotive, AEC-Q101, TrenchFET® FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3238pF @ 20V Power - Max: 187W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Dual Supplier Device Package: PowerPAK® 8 x 8 Dual	In Stock2,610
SQJQ906E-T1_GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 40V POWERPAK8X8 Manufacturer: Vishay Siliconix Series: Automotive, AEC-Q101, TrenchFET® FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 20V Power - Max: 50W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Dual Supplier Device Package: PowerPAK® 8 x 8 Dual	In Stock20,478
SQJQ910EL-T1_GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 100V POWERPAK8X8 Manufacturer: Vishay Siliconix Series: Automotive, AEC-Q101, TrenchFET® FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2832pF @ 50V Power - Max: 187W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Dual Supplier Device Package: PowerPAK® 8 x 8 Dual	In Stock3,798
SQJQ960EL-T1_GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 60V POWERPAK8X8 Manufacturer: Vishay Siliconix Series: Automotive, AEC-Q101, TrenchFET® FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V Power - Max: 71W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Dual Supplier Device Package: PowerPAK® 8 x 8 Dual	In Stock29,598
SQJQ980EL-T1_GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 80V POWERPAK8X8 Manufacturer: Vishay Siliconix Series: Automotive, AEC-Q101, TrenchFET® FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1995pF @ 40V Power - Max: 187W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Dual Supplier Device Package: PowerPAK® 8 x 8 Dual	In Stock4,644
SQS944ENW-T1_GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET N-CHAN 40V Manufacturer: Vishay Siliconix Series: Automotive, AEC-Q101, TrenchFET® FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 1.25A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 615pF @ 25V Power - Max: 27.8W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: PowerPAK® 1212-8W Dual Supplier Device Package: PowerPAK® 1212-8W Dual	In Stock6,318
SQS966ENW-T1_GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET N-CHAN 60V Manufacturer: Vishay Siliconix Series: Automotive, AEC-Q101, TrenchFET® FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 1.25A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 25V Power - Max: 27.8W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: PowerPAK® 1212-8W Dual Supplier Device Package: PowerPAK® 1212-8W Dual	In Stock7,380
SQUN702E-T1_GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET N&P-CH COMMON DRAIN Manufacturer: Vishay Siliconix Series: Automotive, AEC-Q101, TrenchFET® FET Type: N and P-Channel, Common Drain FET Feature: Standard Drain to Source Voltage (Vdss): 40V, 200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 20A (Tc) Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC, 14nC, 30.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1474pF, 1450pF, 1302pF @ 20V, 100V Power - Max: 48W (Tc), 60W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: Die Supplier Device Package: Die	In Stock3,454
SSD2007ASTF ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 2A 8-SOIC Manufacturer: ON Semiconductor Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	In Stock5,310
SSD2007ATF ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 2A 8-SOIC Manufacturer: ON Semiconductor Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	In Stock4,356
SSD2009ATF ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 3A 8-SOIC Manufacturer: ON Semiconductor Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	In Stock4,716
SSD2025TF ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 3.3A 8-SOIC Manufacturer: ON Semiconductor Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.3A Rds On (Max) @ Id, Vgs: 100mOhm @ 3.3A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	In Stock4,788
SSM6L09FUTE85LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 0.4A/0.2A US6 Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 400mA, 200mA Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V Vgs(th) (Max) @ Id: 1.8V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock46,710
SSM6L11TU(TE85L,F) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 0.5A UF6 S Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA Rds On (Max) @ Id, Vgs: 145mOhm @ 250MA, 4V Vgs(th) (Max) @ Id: 1.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V Power - Max: 500mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	In Stock4,158
SSM6L12TU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 500MA UF6 Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V, 218pF @ 10V Power - Max: 500mW Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	In Stock6,246
SSM6L13TU(T5L,F,T) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 800MA UF6 Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: N and P-Channel FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 143mOhm @ 600mA, 4V, 234mOhm @ 600mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V, 250pF @ 10V Power - Max: 500mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	In Stock3,402
SSM6L14FE(TE85L,F) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays X34 PB-F SMALL LOW ON RESISTANCE Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: N and P-Channel FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 720mA (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC, 1.76nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 90pF, 110pF @ 10V Power - Max: 150mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	In Stock82,050
SSM6L16FETE85LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 0.18A/0.1A ES6 Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 0.1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V Power - Max: 150mW Operating Temperature: 150°C (TA) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	In Stock4,212

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