Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SQS944ENW-T1_GE3

SQS944ENW-T1_GE3

For Reference Only

Part Number SQS944ENW-T1_GE3
PNEDA Part # SQS944ENW-T1_GE3
Description MOSFET N-CHAN 40V
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,318
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQS944ENW-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQS944ENW-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SQS944ENW-T1_GE3, SQS944ENW-T1_GE3 Datasheet (Total Pages: 11, Size: 595.2 KB)
PDFSQS944ENW-T1_GE3 Datasheet Cover
SQS944ENW-T1_GE3 Datasheet Page 2 SQS944ENW-T1_GE3 Datasheet Page 3 SQS944ENW-T1_GE3 Datasheet Page 4 SQS944ENW-T1_GE3 Datasheet Page 5 SQS944ENW-T1_GE3 Datasheet Page 6 SQS944ENW-T1_GE3 Datasheet Page 7 SQS944ENW-T1_GE3 Datasheet Page 8 SQS944ENW-T1_GE3 Datasheet Page 9 SQS944ENW-T1_GE3 Datasheet Page 10 SQS944ENW-T1_GE3 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SQS944ENW-T1_GE3 Datasheet
  • where to find SQS944ENW-T1_GE3
  • Vishay Siliconix

  • Vishay Siliconix SQS944ENW-T1_GE3
  • SQS944ENW-T1_GE3 PDF Datasheet
  • SQS944ENW-T1_GE3 Stock

  • SQS944ENW-T1_GE3 Pinout
  • Datasheet SQS944ENW-T1_GE3
  • SQS944ENW-T1_GE3 Supplier

  • Vishay Siliconix Distributor
  • SQS944ENW-T1_GE3 Price
  • SQS944ENW-T1_GE3 Distributor

SQS944ENW-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Rds On (Max) @ Id, Vgs25mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds615pF @ 25V
Power - Max27.8W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount, Wettable Flank
Package / CasePowerPAK® 1212-8W Dual
Supplier Device PackagePowerPAK® 1212-8W Dual

The Products You May Be Interested In

ALD114813SCL

Advanced Linear Devices Inc.

Manufacturer

Advanced Linear Devices Inc.

Series

EPAD®

FET Type

4 N-Channel, Matched Pair

FET Feature

Depletion Mode

Drain to Source Voltage (Vdss)

10.6V

Current - Continuous Drain (Id) @ 25°C

12mA, 3mA

Rds On (Max) @ Id, Vgs

500Ohm @ 2.7V

Vgs(th) (Max) @ Id

1.26V @ 1µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

2.5pF @ 5V

Power - Max

500mW

Operating Temperature

0°C ~ 70°C (TJ)

Mounting Type

Surface Mount

Package / Case

16-SOIC (0.154", 3.90mm Width)

Supplier Device Package

16-SOIC

FMP76-01T

IXYS

Manufacturer

IXYS

Series

-

FET Type

N and P-Channel, Common Drain

FET Feature

Standard

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

54A (Tc), 62A (Tc)

Rds On (Max) @ Id, Vgs

24mOhm @ 38A, 10V, 11mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA, 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

197nC @ 10V, 104nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1370pF @ 25V, 5080pF @ 25V

Power - Max

89W, 132W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

ISOPLUSi5-Pak™

Supplier Device Package

ISOPLUS i4-PAC™

Manufacturer

IXYS

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

1000A

Rds On (Max) @ Id, Vgs

1.2Ohm @ 800A, 10V

Vgs(th) (Max) @ Id

4V @ 10mA

Gate Charge (Qg) (Max) @ Vgs

2355nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Chassis Mount

Package / Case

Y3-Li

Supplier Device Package

Y3-Li

FDME1023PZT

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.6A

Rds On (Max) @ Id, Vgs

142mOhm @ 2.3A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.7nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

405pF @ 10V

Power - Max

600mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-UFDFN Exposed Pad

Supplier Device Package

6-MicroFET (1.6x1.6)

DMC3021LSD-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

8.5A, 7A

Rds On (Max) @ Id, Vgs

21mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16.1nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

767pF @ 10V

Power - Max

2.5W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

Recently Sold

74HC245D

74HC245D

Toshiba Semiconductor and Storage

IC TRANSCVR NON-INVERT 6V 20SOIC

ADM1087AKSZ-REEL7

ADM1087AKSZ-REEL7

Analog Devices

IC SIMPLE SEQUENCER OD SC70-6

PESD12VS1UB,115

PESD12VS1UB,115

Nexperia

TVS DIODE 12V 35V SOD523

VLMRGB343-ST-UV-RS

VLMRGB343-ST-UV-RS

Vishay Semiconductor Opto Division

LED RGB 4PLCC SMD

BYV72EW-200,127

BYV72EW-200,127

WeEn Semiconductors

DIODE ARRAY GP 200V 15A TO247-3

KSZ8081RNBIA-TR

KSZ8081RNBIA-TR

Microchip Technology

IC TRANSCEIVER FULL 1/1 32QFN

MAX6315US31D3+T

MAX6315US31D3+T

Maxim Integrated

IC RESET CIRCUIT 3.08V SOT143-4

AT25256B-SSHL-T

AT25256B-SSHL-T

Microchip Technology

IC EEPROM 256K SPI 20MHZ 8SOIC

SSM3J328R,LF

SSM3J328R,LF

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 6A SOT23F

7443556350

7443556350

Wurth Electronics

FIXED IND 3.5UH 22.5A 3.1 MOHM

LT1963AEFE-3.3#TRPBF

LT1963AEFE-3.3#TRPBF

Linear Technology/Analog Devices

IC REG LINEAR 3.3V 1.5A 16TSSOP

1N6283A

1N6283A

ON Semiconductor

TVS DIODE 28.2V 45.7V AXIAL