SQJB60EP-T1_GE3
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For Reference Only
Part Number | SQJB60EP-T1_GE3 |
PNEDA Part # | SQJB60EP-T1_GE3 |
Description | MOSFET 2 N-CH 60V POWERPAK SO8 |
Manufacturer | Vishay Siliconix |
Unit Price | Request a Quote |
In Stock | 5,940 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Feb 18 - Feb 23 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SQJB60EP-T1_GE3 Resources
Brand | Vishay Siliconix |
ECAD Module |
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Mfr. Part Number | SQJB60EP-T1_GE3 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
Datasheet |
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SQJB60EP-T1_GE3 Specifications
Manufacturer | Vishay Siliconix |
Series | Automotive, AEC-Q101, TrenchFET® |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Rds On (Max) @ Id, Vgs | 12mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 25V |
Power - Max | 48W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® SO-8 Dual |
Supplier Device Package | PowerPAK® SO-8 Dual |
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