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SQJ990EP-T1_GE3

SQJ990EP-T1_GE3

For Reference Only

Part Number SQJ990EP-T1_GE3
PNEDA Part # SQJ990EP-T1_GE3
Description MOSFET 2 N-CH 100V POWERPAK SO8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,292
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQJ990EP-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQJ990EP-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SQJ990EP-T1_GE3, SQJ990EP-T1_GE3 Datasheet (Total Pages: 10, Size: 313.13 KB)
PDFSQJ990EP-T1_GE3 Datasheet Cover
SQJ990EP-T1_GE3 Datasheet Page 2 SQJ990EP-T1_GE3 Datasheet Page 3 SQJ990EP-T1_GE3 Datasheet Page 4 SQJ990EP-T1_GE3 Datasheet Page 5 SQJ990EP-T1_GE3 Datasheet Page 6 SQJ990EP-T1_GE3 Datasheet Page 7 SQJ990EP-T1_GE3 Datasheet Page 8 SQJ990EP-T1_GE3 Datasheet Page 9 SQJ990EP-T1_GE3 Datasheet Page 10

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SQJ990EP-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C34A (Tc)
Rds On (Max) @ Id, Vgs40mOhm @ 6A, 10V, 19mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V, 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1390pF @ 25V, 650pF @ 25V
Power - Max48W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual Asymmetric

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