Transistors

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Records 64,903

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Part Number	Description	In Stock
SSM6L35FE,LM Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 0.18A/0.1A ES6 Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	In Stock35,046
SSM6L35FU(TE85L,F) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 0.18A/0.1A US6 Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: N and P-Channel FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V Power - Max: 200mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock5,382
SSM6L36FE,LM Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 0.5A/0.33A ES6 Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA, 330mA Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	In Stock30,378
SSM6L36TU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET N-CH + P-CH Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: N and P-Channel FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 330mA (Ta) Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V, 1.31Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.23nC, 1.2nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 46pF, 43pF @ 10V Power - Max: 500mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	In Stock7,128
SSM6L39TU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 0.8A UF6 Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: N and P-Channel FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA Rds On (Max) @ Id, Vgs: 143mOhm @ 600MA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V Power - Max: 500mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	In Stock4,914
SSM6L40TU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays X34 PB-F UF6 S-MOS (LF) TRANSIST Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: N and P-Channel FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 1.4A (Ta) Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA, 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.1nC, 2.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF, 120pF @ 15V Power - Max: 500mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	In Stock7,884
SSM6L61NU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 4A UDFN6 Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-UDFN (2x2)	In Stock26,922
SSM6N15AFE,LM Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.1A ES6 Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 7.8pF @ 3V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	In Stock7,884
SSM6N15AFU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.1A 2-2J1C Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock115,080
SSM6N16FE,L3F Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET N-CH X 2 VDS Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V Power - Max: 150mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	In Stock73,368
SSM6N16FUTE85LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 0.1A US6 Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V Power - Max: 200mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock22,386
SSM6N17FU(TE85L,F) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays X34 SMALL LOW RON DUAL NCH MOSFE Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 3V Power - Max: 200mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock29,406
SSM6N24TU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET N-CHX2 VDSS3 Manufacturer: Toshiba Semiconductor and Storage Series: * FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock5,562
SSM6N357R,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL LOW R-ON MOSFETS DUAL NCH Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 650mA (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 12V Power - Max: 1.5W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-TSOP-F	In Stock25,764
SSM6N35AFE,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CHANNEL 20V 250MA ES6 Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V Power - Max: 250mW Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	In Stock30,672
SSM6N35AFU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CHANNEL 20V 250MA US6 Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V Power - Max: 285mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock26,064
SSM6N35FE,LM Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 0.18A ES6 Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 180mA Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	In Stock34,080
SSM6N36FE,LM Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 0.5A ES6 Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	In Stock2,448
SSM6N36TU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET N-CH X 2 VDS Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V Power - Max: 500mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	In Stock57,666
SSM6N37CTD(TPL3) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 0.25A CST6D Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V Power - Max: 140mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: CST6D	In Stock4,104
SSM6N37FE,LM Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 0.25A 2-2N1D Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	In Stock5,796
SSM6N37FU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CHANNEL 20V 250MA US6 Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V Power - Max: 300mW Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock213,492
SSM6N39TU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CHANNEL 20V 1.6A UF6 Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 119mOhm @ 1A, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V Power - Max: 500mW Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	In Stock3,186
SSM6N40TU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET N-CHX2 VDSS3 Manufacturer: Toshiba Semiconductor and Storage Series: * FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock7,596
SSM6N42FE(TE85L,F) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 0.8A ES6 Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	In Stock5,112
SSM6N43FU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 0.5A US6 Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V Power - Max: 200mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock22,488
SSM6N44FE,LM Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.1A ES6 Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	In Stock349,350
SSM6N44FU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays SMALL SIGNAL MOSFET N-CH X 2 VDS Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V Power - Max: 200mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock28,596
SSM6N48FU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays X34 PB-F SOT-363 S-MOS (LF) TRAN Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIII FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3.2Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15.1pF @ 3V Power - Max: 300mW Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock7,020
SSM6N48FU,RF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.1A 2-2J1C Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 3.2Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15.1pF @ 3V Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock6,768

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